Combining a Novel Charge-Based Capacitance Measurement...

IEEE Electron Device Letters 2008 / 06 Vol. 29; Iss. 6

Combining a Novel Charge-Based Capacitance Measurement (CBCM) Technique and Split $C$–$V$ Method to Specifically Characterize the STI Stress Effect Along the Width Direction of MOSFET Devices

Chang, Yao-Wen, Chang, Hsin-Wen, Lu, Tao-Cheng, King, Ya-Chin, Chen, Kuang-Chao, Lu, Chih-Yuan
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Volume:
29
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2008.922729
Date:
June, 2008
File:
PDF, 174 KB
english, 2008
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