Gate Engineering in TiN/La/TiN and TiLaN Metal Layers on...

IEEE Electron Device Letters 2012 / 07 Vol. 33; Iss. 7

Gate Engineering in TiN/La/TiN and TiLaN Metal Layers on Atomic-Layer-Deposited $\hbox{HfO}_{2}/\hbox{Si}$

Kim, Hyo Kyeom, Lee, Sang Young, Yu, Il-Hyuk, Park, Tae Joo, Choi, Rino, Hwang, Cheol Seong
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Volume:
33
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2012.2197369
Date:
July, 2012
File:
PDF, 369 KB
english, 2012
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