Low-Frequency Noise Measurements of AlGaN/GaN...

IEEE Electron Device Letters 2010 / 09 Vol. 31; Iss. 9

Low-Frequency Noise Measurements of AlGaN/GaN Metal–Oxide–Semiconductor Heterostructure Field-Effect Transistors With HfAlO Gate Dielectric

Kayis, Cemil, Leach, Jacob H., Zhu, C. Y., Wu, Mo, Li, X., Ozgur, Ümit, Morkoc, Hadis, Yang, X., Misra, Veena, Handel, Peter H.
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Volume:
31
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2010.2055823
Date:
September, 2010
File:
PDF, 320 KB
english, 2010
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