Volume 31; Issue 9

IEEE Electron Device Letters

Volume 31; Issue 9

1

Flexible Resistive Switching Memory Device Based on Graphene Oxide

Seul Ki Hong, Ji Eun Kim, Sang Ouk Kim, Sung-Yool Choi, Byung Jin Cho

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 373 KB

english, 2010

2

High-Sensitivity Ion-Selective Field-Effect Transistors Using Nanoporous Silicon

Zehfroosh, Nina, Shahmohammadi, Mehran, Mohajerzadeh, Shams

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 313 KB

english, 2010

3

A-RAM Memory Cell: Concept and Operation

Rodriguez, Noel, Gamiz, Francisco, Cristoloveanu, Sorin

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 276 KB

english, 2010

4

Device Characterization of p/i/n Thin-Film Phototransistor for Photosensor Applications

Kimura, Mutsumi, Miura, Yuta, Ogura, Takeshi, Ohno, Shiro, Hachida, Tomohisa, Nishizaki, Yoshitaka, Yamashita, Takehiko, Shima, Takehiro

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 490 KB

english, 2010

5

Novel E-Mode GaN-on-Si MOSHEMT Using a Selective Thermal Oxidation

Medjdoub, F., Van Hove, M., Cheng, K., Marcon, D., Leys, M., Decoutere, S.

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 246 KB

english, 2010

6

High Breakdown ($> \hbox{1500\ V}$) AlGaN/GaN HEMTs by Substrate-Transfer Technology

Lu, Bin, Palacios, TomÃ¡s

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 384 KB

english, 2010

7

High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode Transistor

Lu, Bin, Saadat, Omair Irfan, Palacios, TomÃ¡s

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 241 KB

english, 2010

8

Hot-Carrier Stress Effect on a CMOS 65-nm 60-GHz One-Stage Power Amplifier

Quemerais, Thomas, Moquillon, Laurence, Huard, Vincent, Fournier, Jean-Michel, Benech, Philippe, Corrao, Nicolas, Mescot, Xavier

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 163 KB

english, 2010

9

$g_{m}/I_{\rm d}$ Method for Threshold Voltage Extraction Applicable in Advanced MOSFETs With Nonlinear Behavior Above Threshold

Flandre, Denis, Kilchytska, Valeria, Rudenko, Tamara

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 148 KB

english, 2010

10

Graphene-Based Ambipolar RF Mixers

H. Wang, A. Hsu, J. Wu, J. Kong, T. Palacios

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 304 KB

english, 2010

11

Journal:

IEEE Electron Device Letters

Language:

english

File:

PDF, 321 KB

english,

12

Threshold Voltage Control in $\hbox{Al}_{0.72} \hbox{Ga}_{0.28}\hbox{N/AlN/GaN}$ HEMTs by Work-Function Engineering

Li, Guowang, Zimmermann, Tom, Cao, Yu, Lian, Chuanxin, Xing, Xiu, Wang, Ronghua, Fay, Patrick, Xing, Huili Grace, Jena, Debdeep

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 332 KB

english, 2010

13

Exploiting CMOS Technology to Enhance the Performance of ISFET Sensors

Prodromakis, Themistoklis, Liu, Yan, Constandinou, Timothy, Georgiou, Pantelis, Toumazou, Chris

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 435 KB

english, 2010

14

Low-Frequency Noise Measurements of AlGaN/GaN Metal–Oxide–Semiconductor Heterostructure Field-Effect Transistors With HfAlO Gate Dielectric

Kayis, Cemil, Leach, Jacob H., Zhu, C. Y., Wu, Mo, Li, X., Ozgur, Ümit, Morkoc, Hadis, Yang, X., Misra, Veena, Handel, Peter H.

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 320 KB

english, 2010

15

Failure Analysis of Si Nanowire Field-Effect Transistors Subject to Electrostatic Discharge Stresses

Liu, Wen, Liou, Juin J., Jiang, Y., Singh, Navab, Lo, G. Q., Chung, J., Jeong, Y. H.

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 305 KB

english, 2010

16

Universality of Short-Channel Effects in Undoped-Body Silicon Nanowire MOSFETs

Bangsaruntip, Sarunya, Cohen, Guy M., Majumdar, Amlan, Sleight, Jeffrey W.

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 320 KB

english, 2010

17

$\hbox{PbZr}_{x}\hbox{Ti}_{1 - x}\hbox{O}_{3}$ Ferroelectric Thin-Film Capacitors for Flexible Nonvolatile Memory Applications

Rho, Jonghyun, Kim, Sang Jin, Heo, Wook, Lee, Nae-Eung, Lee, Hwan-Soo, Ahn, Jong-Hyun

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 360 KB

english, 2010

18

Characteristic Enhancement of Solution-Processed In–Ga–Zn Oxide Thin-Film Transistors by Laser Annealing

Yang, Ya-Hui, Yang, Sidney S., Chou, Kan-Sen

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 358 KB

english, 2010

19

Demonstration of Common–Emitter Operation in AlGaN/SiC Heterojunction Bipolar Transistors

Miyake, Hiroki, Kimoto, Tsunenobu, Suda, Jun

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 299 KB

english, 2010

20

Experimental Assessment of Electrons and Holes in Erase Transient of TANOS and TANVaS Memories

Suhane, Amit, Arreghini, Antonio, Van den bosch, Geert, Vandelli, Luca, Padovani, Andrea, Breuil, Laurent, Larcher, Luca, De Meyer, Kristin, Van Houdt, Jan

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 434 KB

english, 2010

21

Nanocrystalline-Silicon Thin-Film Nonvolatile Memory Devices for Display Applications

Jung, Sungwook, Yi, Junsin

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 414 KB

english, 2010

22

Fin-Width Dependence of BJT-Based 1T-DRAM Implemented on FinFET

Moon, Dong-Il, Choi, Sung-Jin, Han, Jin-Woo, Kim, Sungho, Choi, Yang-Kyu

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 334 KB

english, 2010

23

High Performance and Stability of Double-Gate Hf–In–Zn–O Thin-Film Transistors Under Illumination

Park, Joon Seok, Son, Kyoung Seok, Kim, Tae Sang, Jung, Ji Sim, Lee, Kwang-Hee, Maeng, Wan-Joo, Kim, Hyun-Suk, Kim, Eok Su, Park, Kyung-Bae, Seon, Jong-Baek, Kwon, Jang-Yeon, Ryu, Myung Kwan, Lee, San

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 270 KB

english, 2010

24

Degradation Evaluation of $\alpha$-IGZO TFTs for Application to AM-OLEDs

Kimura, Mutsumi, Imai, Shinji

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 369 KB

english, 2010

25

Demonstration of Quasi-AlGaN/GaN HFET Using Ultrathin GaN/AlN Superlattices as a Barrier Layer

Yagi, Shuichi, Shen, Xu-Qiang, Kawakami, Yusuke, Ide, Toshihide, Shimizu, Mitsuaki

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 179 KB

english, 2010

26

Charge Gain, NBTI, and Random Telegraph Noise in EEPROM Flash Memory Devices

Janai, Meir, Bloom, Ilan

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 191 KB

english, 2010

27

Pixel-Division Technology for High-Quality Vertical-Alignment LCDs

Park, Seung Beom, Song, Jang-Kun, Um, Yoonsung, Kim, Kyeong-Hyeon

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 419 KB

english, 2010

28

A Fast Four-Point Sense Methodology for Extraction of Circuit-Relevant Degradation Parameters

Kerber, Andreas, Cartier, Eduard

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 411 KB

english, 2010

29

Tetragonal $\hbox{ZrO}_{2}/\hbox{Al}_{2}\hbox{O}_{3}$ Stack as High-$\kappa$ Gate Dielectric for Si-Based MOS Devices

Wu, Yung-Hsien, Chen, Lun-Lun, Lyu, Rong-Jhe, Li, Ming-Yen, Wu, Hsiao-Che

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 330 KB

english, 2010

30

Unipolar $\hbox{TaO}_{x}$-Based Resistive Change Memory Realized With Electrode Engineering

Zhang, Lijie, Huang, Ru, Zhu, Minghao, Qin, Shiqiang, Kuang, Yongbian, Gao, Dejin, Shi, Congyin, Wang, Yangyuan

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 406 KB

english, 2010

31

Ultralow-Power Ni/GeO/STO/TaN Resistive Switching Memory

Cheng, C. H., Chin, Albert, Yeh, F. S.

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 385 KB

english, 2010

32

Ultrathin HfON Trapping Layer for Charge-Trap Memory Made by Atomic Layer Deposition

Wu, Jyun-Yi, Chen, Yen-Ting, Lin, Ming-Ho, Wu, Tai-Bor

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 518 KB

english, 2010

33

Frequency-Independent T Equivalent Circuit for On-Chip Spiral Inductors

Wei, Jiaju, Wang, Zhigong

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 239 KB

english, 2010

34

High-Performance MIM Capacitors Using Novel PMNT Thin Films

Chen, Wenbin, McCarthy, Kevin G., Mathewson, Alan, Copuroglu, Mehmet, O'Brien, Shane, Winfield, Richard

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 181 KB

english, 2010

35

Broadband and Low-Loss 1 : 9 Transmission-Line Transformer in 0.18- $\mu\hbox{m}$ CMOS Process

Chiou, Hwann-Kaeo, Liao, Hsein-Yuan

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 414 KB

english, 2010

36

Study on Time Constants of Random Telegraph Noise in Gate Leakage Current Through Hot-Carrier Stress Test

Cho, Heung-Jae, Son, Younghwan, Oh, Byoung-Chan, Lee, Sanghoon, Lee, Jong-Ho, Park, Byung-Gook, Shin, Hyungcheol

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 234 KB

english, 2010

37

Nonvolatile Memory With Nitrogen-Stabilized Cubic-Phase $\hbox{ZrO}_{2}$ as Charge-Trapping Layer

Wu, Yung-Hsien, Chen, Lun-Lun, Wu, Jia-Rong, Wu, Min-Lin, Lin, Chia-Chun, Chang, Chia-Hsuan

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 489 KB

english, 2010

38

High-Performance n-Channel Organic Thin-Film Transistor for CMOS Circuits Using Electron-Donating Self-Assembled Layer

Kim, Sung Hoon, Lee, Sun Hee, Jang, Jin

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 307 KB

english, 2010

39

MOCVD $\hbox{Ge}_{3}\hbox{Sb}_{2}\hbox{Te}_{5}$ for PCM Applications

Zheng, J F, Reed, J, Schell, C, Czubatyj, W, Sandoval, R, Fournier, J, Li, W, Hunks, W, Dennison, C, Hudgens, S, Lowrey, T

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 286 KB

english, 2010

40

High On/Off-Current Ratio in Bottom-Gated Microcrystalline-Silicon Thin-Film Transistors With Vertical-Offset Structure

Toyota, Yoshiaki, Matsumura, Mieko, Suzumura, Isao, Kaitoh, Takuo, Gotoh, Jun, Ohkura, Makoto

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 233 KB

english, 2010

41

Postbreakdown Gate-Current Low-Frequency Noise Spectrum as a Detection Tool for High- $\kappa$ and Interfacial Layer Breakdown

Raghavan, Nagarajan, Pey, Kin Leong, Liu, Wenhu, Bosman, Michel

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 409 KB

english, 2010

42

Low-Temperature Wafer Bonding Based on Gold-Induced Crystallization of Amorphous Silicon

Jing, Errong, Xiong, Bin, Wang, Yuelin

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 329 KB

english, 2010

43

A Unified Hopping Model for Subthreshold Current of Phase-Change Memories in Amorphous State

Calderoni, Alessandro, Ferro, Massimo, Ielmini, Daniele, Fantini, Paolo

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 395 KB

english, 2010

44

Electrical Measurement of the Thermal Impedance of Bipolar Transistors

El Rafei, Abdelkader, Sommet, Raphaël, Quere, Raymond

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 355 KB

english, 2010

45

A Physical Model for Post-Breakdown Digital Gate Current Noise

Padovani, Andrea, Morassi, Luca, Raghavan, Nagarajan, Larcher, Luca, Wenhu, Wenhu, Pey, Kin Leong, Bersuker, Gennadi

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 298 KB

english, 2010

46

A Molecular-Rotor Device for Nonvolatile High-Density Memory Applications

Xue, Mei, Kabehie, Sanaz, Stieg, Adam Z., Tkatchouk, Ekaterina, Benitez, Diego, Goddard, William A., Zink, Jeffrey I., Wang, Kang L.

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 317 KB

english, 2010

47

Theoretical Study on Thermoelectric Properties of Ge Nanowires Based on Electronic Band Structures

Huang, Wen, Koong, Chee Shin, Liang, Gengchiau

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 280 KB

english, 2010

48

Low Surface Recombination Velocity on (100) Silicon by Electrochemically Grown Silicon Dioxide Annealed at Low Temperature

Grant, Nicholas Ewen, McIntosh, Keith R.

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 174 KB

english, 2010

49

Improvement of Resistive Switching Uniformity by Introducing a Thin GST Interface Layer

Lv, Hangbing, Wan, Haijun, Tang, Tingao

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 338 KB

english, 2010

50

Doping and Illumination Dependence of $\hbox{1}/f$ Noise in Pentacene Thin-Film Transistors

Jia, Zhang, Meric, Inanc, Shepard, Kenneth L., Kymissis, Ioannis

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 178 KB

english, 2010

51

Field-Emission Characteristics of Molded Molybdenum Nanotip Arrays With Stacked Collimation Gate Electrodes

Tsujino, Soichiro, Helfenstein, Patrick, Kirk, Eugenie, Vogel, Thomas, Escher, Conrad, Fink, Hans-Werner

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 375 KB

english, 2010