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0.6-eV bandgap In/sub 0.69/Ga/sub 0.31/As thermophotovoltaic devices grown on InAs/sub y/P/sub 1-y/ step-graded buffers by molecular beam epitaxy
Hudait, M.K., Lin, Y., Palmisiano, M.N., Ringel, S.A.Volume:
24
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2003.816591
Date:
September, 2003
File:
PDF, 535 KB
english, 2003