Ar Annealing for Suppression of Gate Oxide Thinning at...

IEEE Electron Device Letters 2007 / 07 Vol. 28; Iss. 7

Ar Annealing for Suppression of Gate Oxide Thinning at Shallow Trench Isolation Edge

Ohashi, T., Kubota, T., Nakajima, A.
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Volume:
28
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2007.899328
Date:
July, 2007
File:
PDF, 168 KB
english, 2007
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