Toward Conformal Damage-Free Doping With Abrupt...

IEEE Transactions on Electron Devices 2014 / 04 Vol. 61; Iss. 4

Toward Conformal Damage-Free Doping With Abrupt Ultrashallow Junction: Formation of Si Monolayers and Laser Anneal as a Novel Doping Technique for InGaAs nMOSFETs

Kong, Eugene Y.-J., Guo, Pengfei, Gong, Xiao, Liu, Bin, Yeo, Yee-Chia
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Volume:
61
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/ted.2014.2306934
Date:
April, 2014
File:
PDF, 2.07 MB
english, 2014
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