In-situ low energy BF2+ion doping for silicon molecular...

IEEE Electron Device Letters 1982 / 05 Vol. 3; Iss. 5

In-situ low energy BF2+ion doping for silicon molecular beam epitaxy

Swartz, R.G., McFee, J.H., Voshchenkov, A.M., Finegan, S.N., Archer, V.D., O'Day, P.J.
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Volume:
3
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/edl.1982.25513
Date:
May, 1982
File:
PDF, 415 KB
english, 1982
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