Volume 3; Issue 5

IEEE Electron Device Letters

Volume 3; Issue 5

1

Obtaining the specific contact resistance from transmission line model measurements

Reeves, G.K., Harrison, H.B.

Journal:

IEEE Electron Device Letters

Year:

1982

Language:

english

File:

PDF, 297 KB

english, 1982

2

Laser activated flow of phosphosilicate glass in integrated circuit devices

M. Delfino, T. Reifsteck

Journal:

IEEE Electron Device Letters

Year:

1982

Language:

english

File:

PDF, 560 KB

english, 1982

3

A new Al0.3Ga0.7As/GaAs modulation-doped FET

Kopp, W., Fischer, R., Thorne, R.E., Su, S.L., Drummond, T.J., Morkoc, H., Cho, A.Y.

Journal:

IEEE Electron Device Letters

Year:

1982

Language:

english

File:

PDF, 389 KB

english, 1982

4

In-situ low energy BF2+ion doping for silicon molecular beam epitaxy

Swartz, R.G., McFee, J.H., Voshchenkov, A.M., Finegan, S.N., Archer, V.D., O'Day, P.J.

Journal:

IEEE Electron Device Letters

Year:

1982

Language:

english

File:

PDF, 415 KB

english, 1982

5

Tantalum oxide capacitors for GaAs monolithic integrated circuits

Elta, M.E., Chu, A., Mahoney, L.J., Cerretani, R.T., Courtney, W.E.

Journal:

IEEE Electron Device Letters

Year:

1982

Language:

english

File:

PDF, 354 KB

english, 1982

6

High efficiency a-Si:H p-i-n solar cell using a SnO2/glass substrate

Iida, H., Shiba, N., Mishuku, T., Ito, A., Karasawa, H., Yamanaka, M., Hayashi, Y.

Journal:

IEEE Electron Device Letters

Year:

1982

Language:

english

File:

PDF, 212 KB

english, 1982

7

Conduction in polycrystalline silicon: Diffusion theory and extended state mobility model

Kim, D.M., Khondker, A.N., Shah, R.R., Crosthwait, D.L.

Journal:

IEEE Electron Device Letters

Year:

1982

Language:

english

File:

PDF, 356 KB

english, 1982

8

Demonstration of electrical performance of QGBF polysilicon solar cell structure

Gonzalez, F., Neugroschel, A.

Journal:

IEEE Electron Device Letters

Year:

1982

Language:

english

File:

PDF, 418 KB

english, 1982

9

Errata

Jing-en Luan,, Tong Yan Tee,

Journal:

IEEE Electron Device Letters

Year:

1982

Language:

english

File:

PDF, 80 KB

english, 1982

10

High speed response InGaAsP/InP DH LED's in the 1 µm wavelength region

Wada, O., Hamaguchi, H., Nishitani, Y., Sakurai, T.

Journal:

IEEE Electron Device Letters

Year:

1982

Language:

english

File:

PDF, 300 KB

english, 1982

11

An open tube method of Zn diffusion in III-V compounds

Journal:

IEEE Electron Device Letters

Year:

1982

Language:

english

File:

PDF, 332 KB

english, 1982

12

Performance prediction for submicron GaAs SDFL logic

Shur, M.S., Long, D.

Journal:

IEEE Electron Device Letters

Year:

1982

Language:

english

File:

PDF, 432 KB

english, 1982

13

Determination of built-in-potential in N-I-P a-Si:H solar cells

Han, M.-K., Sung, P., Anderson, W.A.

Journal:

IEEE Electron Device Letters

Year:

1982

Language:

english

File:

PDF, 374 KB

english, 1982