The impact of scaling-down oxide thickness on poly-Si...

IEEE Electron Device Letters 1994 / 04 Vol. 15; Iss. 4

The impact of scaling-down oxide thickness on poly-Si thin-film transistors' I-V characteristics

Pole-Shang Lin,, To-Sing Li,
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Volume:
15
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/55.285404
Date:
April, 1994
File:
PDF, 169 KB
english, 1994
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