Volume 15; Issue 4

IEEE Electron Device Letters

Volume 15; Issue 4

1

An analytic polysilicon depletion effect model for MOSFETs

Rios, R., Arora, N.D., Cheng-Liang Huang

Journal:

IEEE Electron Device Letters

Year:

1994

Language:

english

File:

PDF, 232 KB

english, 1994

2

Mobility-field behavior of fully depleted SOI MOSFET's

J. Wang, N. Kistler, J. Woo, C. Viswanathan

Journal:

IEEE Electron Device Letters

Year:

1994

Language:

english

File:

PDF, 261 KB

english, 1994

3

Self-aligned InAlAs/InGaAs heterojunction bipolar transistor with a buried subcollector grown by selective epitaxy

Jong-In Song,, Frei, M.R., Hayes, J.R., Bhat, R., Cox, H.M.

Journal:

IEEE Electron Device Letters

Year:

1994

Language:

english

File:

PDF, 242 KB

english, 1994

4

Measurement of substrate current in SOI MOSFETs

Nguyen, C.T., Ver Ploeg, E.P., Kuehne, S.C., Plummer, J.D., Wong, S.S., Renteln, P.

Journal:

IEEE Electron Device Letters

Year:

1994

Language:

english

File:

PDF, 221 KB

english, 1994

5

The impact of scaling-down oxide thickness on poly-Si thin-film transistors' I-V characteristics

Pole-Shang Lin,, To-Sing Li,

Journal:

IEEE Electron Device Letters

Year:

1994

Language:

english

File:

PDF, 169 KB

english, 1994

6

Effects of nonlinear storage capacitor on DRAM READ/WRITE

Bo Jiang,, Sudhama, C., Khamankar, R., Jiyoung Kim,, Lee, J.C.

Journal:

IEEE Electron Device Letters

Year:

1994

Language:

english

File:

PDF, 244 KB

english, 1994

7

Effect of plasma poly etch on effective channel length and hot carrier reliability in submicron transistors

Xiaoyu Li,, Divakaruni, R., Jen-Tai Hsu,, Prabhakar, V., Aum, P., Chan, D., Viswanathan, C.R.

Journal:

IEEE Electron Device Letters

Year:

1994

Language:

english

File:

PDF, 187 KB

english, 1994

8

Random telegraph signals in accumulation-mode SOI/nMOSFETs

Ming-Horn Tsai,, Binglong Zhang,, Tso-Ping Ma,, Wang, L.K.

Journal:

IEEE Electron Device Letters

Year:

1994

Language:

english

File:

PDF, 209 KB

english, 1994

9

Enhancement of oxide break-up by implantation of fluorine in poly-Si emitter contacted p/sup +/-n shallow junction formation

Shye Lin Wu,, Chung Len Lee,, Tan Fu Lei,, Chen, C.F., Chen, L.J., Ho, K.Z., Ling, Y.C.

Journal:

IEEE Electron Device Letters

Year:

1994

Language:

english

File:

PDF, 194 KB

english, 1994

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