MOSFET's on Silicon prepared by moving melt zone...

IEEE Electron Device Letters 1981 / 10 Vol. 2; Iss. 10

MOSFET's on Silicon prepared by moving melt zone recrystallization of encapsulated polycrystalline Silicon on an insulating substrate

Maby, E.W., Geis, M.W., LeCoz, Y.L., Silversmith, D.J., Mountain, R.W., Antoniadis, D.A., Antoniadis, D.A.
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Volume:
2
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/edl.1981.25418
Date:
October, 1981
File:
PDF, 479 KB
english, 1981
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