Volume 2; Issue 10

IEEE Electron Device Letters

Volume 2; Issue 10

1

MOSFET's on Silicon prepared by moving melt zone recrystallization of encapsulated polycrystalline Silicon on an insulating substrate

Maby, E.W., Geis, M.W., LeCoz, Y.L., Silversmith, D.J., Mountain, R.W., Antoniadis, D.A., Antoniadis, D.A.

Journal:

IEEE Electron Device Letters

Year:

1981

Language:

english

File:

PDF, 479 KB

english, 1981

2

Traveling-wave tube efficiency improvement with textured pyrolytic graphite multistage depressed collector electrodes

Curren, A.N., Fox, T.A.

Journal:

IEEE Electron Device Letters

Year:

1981

Language:

english

File:

PDF, 412 KB

english, 1981

3

Current transport in modulation doped (Al,Ga)As/GaAs heterostructures: Applications to high speed FET's

Journal:

IEEE Electron Device Letters

Year:

1981

Language:

english

File:

PDF, 374 KB

english, 1981

4

Selective oxidation technologies for high density MOS

Hui, J., Chiu, T.Y., Wong, S., Oldham, W.G.

Journal:

IEEE Electron Device Letters

Year:

1981

Language:

english

File:

PDF, 1.10 MB

english, 1981

5

A Josephson technology system level experiment

Ketchen, M.B., van der Hoeven, B.J., Matisoo, J., Greiner, J.H., Herrell, D.J., Wang, R.H., Guernsey, R.W., Anderson, C.J., Arnett, P.C., Bermon, S., Bickford, H.R., Bright, A.A., Geldermans, P., Ghee

Journal:

IEEE Electron Device Letters

Year:

1981

Language:

english

File:

PDF, 597 KB

english, 1981

6

Cr-MIS solar cells using thin epitaxial silicon grown on poly-silicon substrates

Anderson, W.A., Rajeswaran, G., Rao, V.J., Thayer, M.

Journal:

IEEE Electron Device Letters

Year:

1981

Language:

english

File:

PDF, 651 KB

english, 1981

7

Sheet resistance-junction depth relationships in implanted arsenic diffusion

Liu, T.M., Oldham, W.G.

Journal:

IEEE Electron Device Letters

Year:

1981

Language:

english

File:

PDF, 311 KB

english, 1981

8

A high density CMOS inverter with stacked transistors

Colinge, J.P., Demoulin, E.

Journal:

IEEE Electron Device Letters

Year:

1981

Language:

english

File:

PDF, 276 KB

english, 1981

9

Laser recrystallized polysilicon on SiO2for high performance resistors

Shah, R.R., Hollingsworth, D.R., Crosthwait, D.L.

Journal:

IEEE Electron Device Letters

Year:

1981

Language:

english

File:

PDF, 433 KB

english, 1981

10

Gunn oscillation in GaAs optically triggered by 1.06 µm radiation

Chin, R., Nakano, K., Coleman, J.J., Dapkus, P.D.

Journal:

IEEE Electron Device Letters

Year:

1981

Language:

english

File:

PDF, 360 KB

english, 1981

11

Detailed performance characteristics of hybrid InP-InGaAsP APD's

Yeats, R., Von Dessonneck, K.

Journal:

IEEE Electron Device Letters

Year:

1981

Language:

english

File:

PDF, 534 KB

english, 1981

12

Magnetotransconductance mobility measurements of GaAs MESFET's

Jay, P.R., Wallis, R.H.

Journal:

IEEE Electron Device Letters

Year:

1981

Language:

english

File:

PDF, 326 KB

english, 1981

13

A high speed tapped CCD photodiode linear image sensor

Chen, P.J., Tseng, H.F.

Journal:

IEEE Electron Device Letters

Year:

1981

Language:

english

File:

PDF, 269 KB

english, 1981