Optimization of RF Performance of Metallic Source/Drain SOI...

IEEE Electron Device Letters 2009 / 11 Vol. 30; Iss. 11

Optimization of RF Performance of Metallic Source/Drain SOI MOSFETs Using Dopant Segregation at the Schottky Interface

Valentin, R., Dubois, E., Larrieu, G., Raskin, J.-P., Dambrine, G., Breil, N., Danneville, F.
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Volume:
30
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2009.2031254
Date:
November, 2009
File:
PDF, 289 KB
english, 2009
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