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High-voltage AlGaN/GaN Schottky barrier diodes on silicon using a post-process O2 treatment
Seok, Ogyun, Han, Min-Koo, Byun, Young-Chul, Kim, Jiyoung, Shin, Hyun-Chang, Ha, Min-WooVolume:
103
Language:
english
Journal:
Solid-State Electronics
DOI:
10.1016/j.sse.2014.09.007
Date:
January, 2015
File:
PDF, 900 KB
english, 2015