Hole Mobility Model With Silicon Inversion Layer Symmetry...

IEEE Electron Device Letters 2009 / 09 Vol. 30; Iss. 9

Hole Mobility Model With Silicon Inversion Layer Symmetry and Stress-Dependent Piezoconductance Coefficients

Bufler, F.M., Erlebach, A., Oulmane, M.
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Volume:
30
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2009.2027721
Date:
September, 2009
File:
PDF, 282 KB
english, 2009
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