Gallium-Incorporated TiN Metal Gate With Band-Edge Work Function and Excellent Thermal Stability for PMOS Device Applications
Xu, Qiuxia, Xu, Gaobo, Liang, Qingqing, Yao, Yuan, Duan, Xiaofeng, Li, JunfengVolume:
32
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2011.2160147
Date:
September, 2011
File:
PDF, 210 KB
english, 2011