High-isolation bonding pad design for silicon RFIC up to 20...

IEEE Electron Device Letters 2003 / 09 Vol. 24; Iss. 9

High-isolation bonding pad design for silicon RFIC up to 20 GHz

Sang Lam,, Mok, P.K.T., Ko, P.K., Mansun Chan,
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Volume:
24
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2003.816589
Date:
September, 2003
File:
PDF, 743 KB
english, 2003
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