Gate Based on GaAs/AlGaAs Three-Terminal Junctions

IEEE Electron Device Letters 2007 / 10 Vol. 28; Iss. 10

Gate Based on GaAs/AlGaAs Three-Terminal Junctions

Muller, C. R., Worschech, L., Hopfner, P., Hofling, S., Forchel, A.
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Volume:
28
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2007.906108
Date:
October, 2007
File:
PDF, 223 KB
english, 2007
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