The origination and optimization of Si/SiO2 interface...

IEEE Electron Device Letters 2003 / 05 Vol. 24; Iss. 5

The origination and optimization of Si/SiO2 interface roughness and its effect on CMOS performance

Yuanning Chen,, Myricks, R., Decker, M., Liu, J., Higashi, G.S.
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Volume:
24
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2003.812545
Date:
May, 2003
File:
PDF, 1.55 MB
english, 2003
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