Enhancement of Resistive Switching Characteristics in $...

IEEE Electron Device Letters 2011 / 06 Vol. 32; Iss. 6

Enhancement of Resistive Switching Characteristics in $ \hbox{Al}_{2}\hbox{O}_{3}$-Based RRAM With Embedded Ruthenium Nanocrystals

Chen, Lin, Gou, Hong-Yan, Sun, Qing-Qing, Zhou, Peng, Lu, Hong-Liang, Wang, Peng-Fei, Ding, Shi-Jin, Zhang, DavidWei
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Volume:
32
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2011.2125774
Date:
June, 2011
File:
PDF, 320 KB
english, 2011
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