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High-Current-Gain InP/GaInP/GaAsSb/InP DHBTs With $f_{T} = \hbox{436}\ \hbox{GHz}$
Liu, H. G., Ostinelli, O., Zeng, Y. P., Bolognesi, C. R.Volume:
28
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2007.905461
Date:
October, 2007
File:
PDF, 401 KB
english, 2007