Band offset induced threshold variation in strained-Si...

IEEE Electron Device Letters 2003 / 09 Vol. 24; Iss. 9

Band offset induced threshold variation in strained-Si nMOSFETs

Jung-Suk Goo,, Qi Xiang,, Takamura, Y., Arasnia, F., Paton, E.N., Besser, P., Pan, J., Ming-Ren Lin,
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Volume:
24
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2003.815431
Date:
September, 2003
File:
PDF, 208 KB
english, 2003
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