New Device Structure Using Array Transistors and Flexible...

IEEE Transactions on Semiconductor Manufacturing 2005 / 05 Vol. 18; Iss. 2

New Device Structure Using Array Transistors and Flexible U-Grooves Suitable for 18-V, High-Performance SOI Complementary Bipolar LSIs

Tamaki, Y., Tsuji, K., Otani, O., Nonami, H., Tomatsuri, T., Yoshida, E., Hamamoto, M., Nakazato, N.
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Volume:
18
Language:
english
Journal:
IEEE Transactions on Semiconductor Manufacturing
DOI:
10.1109/tsm.2005.845017
Date:
May, 2005
File:
PDF, 1.55 MB
english, 2005
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