Mechanism of Increased High-Frequency Channel Noise With...

IEEE Electron Device Letters 2009 / 11 Vol. 30; Iss. 11

Mechanism of Increased High-Frequency Channel Noise With PECVD SiN Passivation in AlGaN/GaN HEMTs

Liu, Z.H., Ng, G.I., Arulkumaran, S.
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Volume:
30
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2009.2030908
Date:
November, 2009
File:
PDF, 323 KB
english, 2009
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