Dynamic Analysis of a Si/SiGe-Based Impact Ionization...

IEEE Electron Device Letters 2009 / 11 Vol. 30; Iss. 11

Dynamic Analysis of a Si/SiGe-Based Impact Ionization Avalanche Transit Time Photodiode With an Ultrahigh Gain-Bandwidth Product

Shi, J.-W., Kuo, F.M., Hong, F.-C., Wu, Y.-S.
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Volume:
30
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2009.2031129
Date:
November, 2009
File:
PDF, 448 KB
english, 2009
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