$\hbox{HfO}_{2}$-Based RRAM Devices With Varying Contact Sizes and Their Electrical Behavior
Sriraman, Venkatakrishnan, Li, Xiang, Singh, Navab, Lee, SungjooVolume:
33
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2012.2195709
Date:
July, 2012
File:
PDF, 425 KB
english, 2012