Physical Mechanism of High-Programming-Efficiency...

IEEE Electron Device Letters 2009 / 11 Vol. 30; Iss. 11

Physical Mechanism of High-Programming-Efficiency Dynamic-Threshold Source-Side Injection in Wrapped-Select-Gate SONOS for nor-Type Flash Memory

Kuan-Ti Wang,, Tien-Sheng Chao,, Tsung-Yu Chiang,, Woei-Cherng Wu,, Po-Yi Kuo,, Yi-Hong Wu,, Yu-Lun Lu,, Chia-Chun Liao,, Wen-Luh Yang,, Chien-Hsing Lee,, Tsung-Min Hsieh,, Jhyy-Cheng Liou,
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Volume:
30
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2009.2031601
Date:
November, 2009
File:
PDF, 427 KB
english, 2009
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