Dose dependence of interface traps in gate oxides at high...

IEEE Transactions on Nuclear Science 1989 / Dec. Vol. 36; Iss. 6

Dose dependence of interface traps in gate oxides at high levels of total dose

Baze, M.P., Plaag, R.E., Johnson, A.H.
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Volume:
36
Language:
english
Journal:
IEEE Transactions on Nuclear Science
DOI:
10.1109/23.45379
Date:
January, 1989
File:
PDF, 617 KB
english, 1989
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