Doped Epitaxial Growth on Si for High-Performance...

IEEE Electron Device Letters 2009 / 09 Vol. 30; Iss. 9

Doped Epitaxial Growth on Si for High-Performance $\hbox{n}^{+}/\hbox{p}$-Junction Diode

Hyun-Yong Yu,, Nishi, Y., Saraswat, K.C., Szu-Lin Cheng,, Griffin, P.B.
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Volume:
30
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2009.2027823
Date:
September, 2009
File:
PDF, 276 KB
english, 2009
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