Schottky-Barrier Height Tuning by Means of Ion Implantation...

IEEE Electron Device Letters 2007 / 07 Vol. 28; Iss. 7

Schottky-Barrier Height Tuning by Means of Ion Implantation Into Preformed Silicide Films Followed by Drive-In Anneal

Zhen Zhang,, Zhijun Qiu,, Ran Liu,, Ostling, M., Shi-Li Zhang,
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Volume:
28
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2007.900295
Date:
July, 2007
File:
PDF, 127 KB
english, 2007
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