High-Quality $\hbox{Al}_{2}\hbox{O}_{3}$ for Low-Voltage...

IEEE Electron Device Letters 2010 / 12 Vol. 31; Iss. 12

High-Quality $\hbox{Al}_{2}\hbox{O}_{3}$ for Low-Voltage High-Speed High-Temperature (Up to 250 $^{\circ}\hbox{C}$) Nonvolatile Memory Technology

Cui, Sharon, Peng, Cheng-Yi, Zhang, Wenqi, Sun, Xiao, Yang, Jie, Liu, Zuoguang, Kornblum, Lior, Eizenberg, Moshe, Ma, T. P.
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Volume:
31
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2010.2072902
Date:
December, 2010
File:
PDF, 621 KB
english, 2010
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