Subthreshold Degradation of Gate-all-Around Silicon...

IEEE Electron Device Letters 2011 / 09 Vol. 32; Iss. 9

Subthreshold Degradation of Gate-all-Around Silicon Nanowire Field-Effect Transistors: Effect of Interface Trap Charge

Hong, B. H., Cho, N., Lee, S. J., Yu, Y. S., Choi, L., Jung, Y. C., Cho, K. H., Yeo, K. H., Kim, D.-W., Jin, G. Y., Oh, K. S., Park, D., Song, S.-H., Rieh, J.-S., Hwang, S. W.
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Volume:
32
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2011.2159473
Date:
September, 2011
File:
PDF, 260 KB
english, 2011
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