Improved Interfacial Properties of Ge MOS Capacitor With...

IEEE Electron Device Letters 2011 / 02 Vol. 32; Iss. 2

Improved Interfacial Properties of Ge MOS Capacitor With High-k Dielectric by Using TaON/GeON Dual Interlayer

Ji, F., Xu, J. P., Lai, P. T., Li, C. X., Liu, J. G.
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Volume:
32
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2010.2092749
Date:
February, 2011
File:
PDF, 277 KB
english, 2011
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