High-performance In/sub 0.08/Ga/sub 0.92/As MESFETs on GaAs

IEEE Electron Device Letters 1988 / 11 Vol. 9; Iss. 11

High-performance In/sub 0.08/Ga/sub 0.92/As MESFETs on GaAs

Shih, H.-D., Kim, B., Bradshaw, K., Tserng, H.Q.
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Volume:
9
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/55.9290
Date:
November, 1988
File:
PDF, 249 KB
english, 1988
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