Experimental determination of electron and hole mobilities...

IEEE Electron Device Letters 1997 / 05 Vol. 18; Iss. 5

Experimental determination of electron and hole mobilities in MOS accumulation layers

McKeon, J.B., Chindalore, G., Hareland, S.A., Shih, W.-K., Wang, C., Tasch, A.F., Maziar, C.M.
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Volume:
18
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/55.568762
Date:
May, 1997
File:
PDF, 80 KB
english, 1997
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