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Volume 18; Issue 5
Main
IEEE Electron Device Letters
Volume 18; Issue 5
IEEE Electron Device Letters
Volume 18; Issue 5
1
Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's
Lo, S.-H.
,
Buchanan, D.A.
,
Taur, Y.
,
Wang, W.
Journal:
IEEE Electron Device Letters
Year:
1997
Language:
english
File:
PDF, 71 KB
Your tags:
english, 1997
2
Large enhancement of interband tunneling current densities of over 10/sup 5/ A/cm/sup 2/ in In/sub 0.53/Ga/sub 0.47/As-based surface tunnel transistors
Uemura, T.
,
Baba, T.
Journal:
IEEE Electron Device Letters
Year:
1997
Language:
english
File:
PDF, 104 KB
Your tags:
english, 1997
3
Characteristics of polysilicon thin-film transistor with thin-gate dielectric grown by electron cyclotron resonance nitrous oxide plasma
Jin-Woo Lee,
,
Nae-In Lee,
,
Jung-In Kan,
,
Chul-Hi Han,
Journal:
IEEE Electron Device Letters
Year:
1997
Language:
english
File:
PDF, 61 KB
Your tags:
english, 1997
4
Partially depleted SOI NMOSFET's with self-aligned polysilicon gate formed on the recessed channel region
Jong-Ho Lee,
,
Hyung-Cheol Shin,
,
Jong-June Kim,
,
Choon-Bae Park,
,
Young-June Park,
Journal:
IEEE Electron Device Letters
Year:
1997
Language:
english
File:
PDF, 102 KB
Your tags:
english, 1997
5
Electrical characterization of dielectrically isolated silicon substrates containing buried metallic layers
Goh, W.L.
,
Montgomery, H.
,
Raza, S.H.
,
Armstrong, B.M.
,
Gamble, H.S.
Journal:
IEEE Electron Device Letters
Year:
1997
Language:
english
File:
PDF, 70 KB
Your tags:
english, 1997
6
A 277-GHz f/sub max/ transferred-substrate heterojunction bipolar transistor
Agarwal, B.
,
Mensa, D.
,
Pullela, R.
,
Lee, Q.
,
Bhattacharya, U.
,
Samoska, L.
,
Guthrie, J.
,
Rodwell, M.J.W.
Journal:
IEEE Electron Device Letters
Year:
1997
Language:
english
File:
PDF, 101 KB
Your tags:
english, 1997
7
Experimental determination of threshold voltage shifts due to quantum mechanical effects in MOS electron and hole inversion layers
Chindalore, G.
,
Hareland, S.A.
,
Jallepalli, S.A.
,
Tasch, A.F.
,
Maziar, C.M.
,
Chia, V.K.F.
,
Smith, S.
Journal:
IEEE Electron Device Letters
Year:
1997
Language:
english
File:
PDF, 72 KB
Your tags:
english, 1997
8
The accumulation channel driven bipolar transistor (ACBT)
Thapar, N.
,
Baliga, B.J.
Journal:
IEEE Electron Device Letters
Year:
1997
Language:
english
File:
PDF, 71 KB
Your tags:
english, 1997
9
Monolithic Schottky-collector resonant tunnel diode oscillator arrays to 650 GHz
Reddy, M.
,
Martin, S.C.
,
Molnar, A.C.
,
Muller, R.E.
,
Smith, R.P.
,
Siegel, P.H.
,
Mondry, M.J.
,
Rodwell, M.J.W.
,
Kroemer, H.
,
Allen, S.J.
Journal:
IEEE Electron Device Letters
Year:
1997
Language:
english
File:
PDF, 86 KB
Your tags:
english, 1997
10
50-nm channel nMOSFET/SIMOX with an ultrathin 2- or 6-nm thick silicon layer and their significant features of operations
Omura, Y.
,
Kurihara, K.
,
Takahashi, Y.
,
Ishiyama, T.
,
Nakajima, Y.
,
Izumi, K.
Journal:
IEEE Electron Device Letters
Year:
1997
Language:
english
File:
PDF, 123 KB
Your tags:
english, 1997
11
Nitridation of silicon-dioxide films grown on 6H silicon carbide
Dimitrijev, S.
,
Hui-Feng Li,
,
Harrison, H.B.
,
Sweatman, D.
Journal:
IEEE Electron Device Letters
Year:
1997
Language:
english
File:
PDF, 57 KB
Your tags:
english, 1997
12
High-temperature, high-voltage operation of pulse-doped diamond MESFET
Vescan, A.
,
Gluche, P.
,
Ebert, W.
,
Kohn, E.
Journal:
IEEE Electron Device Letters
Year:
1997
Language:
english
File:
PDF, 93 KB
Your tags:
english, 1997
13
The electrostatic charging damage on the characteristics and reliability of polysilicon thin-film transistors during plasma hydrogenation
Kan-Yuan Lee,
,
Yean-Kuen Fang,
,
Chii-Wen Chen,
,
Huang, K.C.
,
Mong-Song Liang,
,
Wuu, G.
Journal:
IEEE Electron Device Letters
Year:
1997
Language:
english
File:
PDF, 54 KB
Your tags:
english, 1997
14
Impact of boron penetration at P/sup +/-poly/gate oxide interface on deep-submicron device reliability for dual-gate CMOS technologies
Ming-Yin Hao,
,
Nayak, D.
,
Rakkit, R.
Journal:
IEEE Electron Device Letters
Year:
1997
Language:
english
File:
PDF, 85 KB
Your tags:
english, 1997
15
Experimental determination of electron and hole mobilities in MOS accumulation layers
McKeon, J.B.
,
Chindalore, G.
,
Hareland, S.A.
,
Shih, W.-K.
,
Wang, C.
,
Tasch, A.F.
,
Maziar, C.M.
Journal:
IEEE Electron Device Letters
Year:
1997
Language:
english
File:
PDF, 80 KB
Your tags:
english, 1997
16
Preventing boron penetration through 25-/spl Aring/ gate oxides with nitrogen implant in the Si substrates
Liu, C.T.
,
Ma, Y.
,
Luftman, H.
,
Hillenius, S.J.
Journal:
IEEE Electron Device Letters
Year:
1997
Language:
english
File:
PDF, 83 KB
Your tags:
english, 1997
17
A novel stack structure to improve the degradation of W-polycide gated MOS device with undoped a-Si/heavily-doped poly-Si multilayer
Kan-Yuan Lee,
,
Yean-Kuen Fang,
,
Chii-Wen Chen,
,
Mong-Song Liang,
,
Jang-Cheng Hsieh,
Journal:
IEEE Electron Device Letters
Year:
1997
Language:
english
File:
PDF, 52 KB
Your tags:
english, 1997
18
Electron mobility in ULSI MOSFETs: effect of interface traps and oxide nitridation
Perron, L.
,
Lacaita, A.L.
,
Pacelli, A.
,
Bez, R.
Journal:
IEEE Electron Device Letters
Year:
1997
Language:
english
File:
PDF, 82 KB
Your tags:
english, 1997
19
Short-timescale thermal mapping of semiconductor devices
Ju, S.
,
Kading, O.W.
,
Leung, Y.K.
,
Wong, S.S.
,
Goodson, K.E.
Journal:
IEEE Electron Device Letters
Year:
1997
Language:
english
File:
PDF, 65 KB
Your tags:
english, 1997
20
The role of resist for ultrathin gate oxide degradation during O2 plasma ashing
Chao-Hsin Chien,
,
Chun-Yen Chang,
,
Horng-Chih Lin,
,
Shean-Guang Chiou,
,
Tiao-Yuan Huang,
,
Tsai-Fu Chang,
,
Szu-Kang Hsien,
Journal:
IEEE Electron Device Letters
Year:
1997
Language:
english
File:
PDF, 59 KB
Your tags:
english, 1997
21
Monolithic CMOS digital integrated circuits in 6H-SiC using an implanted p-well process
Ryu, S.
,
Kornegay, K.T.
,
Cooper, J.A.
,
Melloch, M.R.
Journal:
IEEE Electron Device Letters
Year:
1997
Language:
english
File:
PDF, 61 KB
Your tags:
english, 1997
22
Enhancement of electron emission efficiency and stability of molybdenum-tip field emitter array by diamond like carbon coating
Jae Hoon Jung,
,
Byeoung Kwon Ja,
,
Yun Hi Lee,
,
Jin Jang,
,
Myung Hwan Oh,
Journal:
IEEE Electron Device Letters
Year:
1997
Language:
english
File:
PDF, 65 KB
Your tags:
english, 1997
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