Volume 18; Issue 5

IEEE Electron Device Letters

Volume 18; Issue 5

1

Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's

Lo, S.-H., Buchanan, D.A., Taur, Y., Wang, W.

Journal:

IEEE Electron Device Letters

Year:

1997

Language:

english

File:

PDF, 71 KB

english, 1997

2

Large enhancement of interband tunneling current densities of over 10/sup 5/ A/cm/sup 2/ in In/sub 0.53/Ga/sub 0.47/As-based surface tunnel transistors

Uemura, T., Baba, T.

Journal:

IEEE Electron Device Letters

Year:

1997

Language:

english

File:

PDF, 104 KB

english, 1997

3

Characteristics of polysilicon thin-film transistor with thin-gate dielectric grown by electron cyclotron resonance nitrous oxide plasma

Jin-Woo Lee,, Nae-In Lee,, Jung-In Kan,, Chul-Hi Han,

Journal:

IEEE Electron Device Letters

Year:

1997

Language:

english

File:

PDF, 61 KB

english, 1997

4

Partially depleted SOI NMOSFET's with self-aligned polysilicon gate formed on the recessed channel region

Jong-Ho Lee,, Hyung-Cheol Shin,, Jong-June Kim,, Choon-Bae Park,, Young-June Park,

Journal:

IEEE Electron Device Letters

Year:

1997

Language:

english

File:

PDF, 102 KB

english, 1997

5

Electrical characterization of dielectrically isolated silicon substrates containing buried metallic layers

Goh, W.L., Montgomery, H., Raza, S.H., Armstrong, B.M., Gamble, H.S.

Journal:

IEEE Electron Device Letters

Year:

1997

Language:

english

File:

PDF, 70 KB

english, 1997

6

A 277-GHz f/sub max/ transferred-substrate heterojunction bipolar transistor

Agarwal, B., Mensa, D., Pullela, R., Lee, Q., Bhattacharya, U., Samoska, L., Guthrie, J., Rodwell, M.J.W.

Journal:

IEEE Electron Device Letters

Year:

1997

Language:

english

File:

PDF, 101 KB

english, 1997

7

Experimental determination of threshold voltage shifts due to quantum mechanical effects in MOS electron and hole inversion layers

Chindalore, G., Hareland, S.A., Jallepalli, S.A., Tasch, A.F., Maziar, C.M., Chia, V.K.F., Smith, S.

Journal:

IEEE Electron Device Letters

Year:

1997

Language:

english

File:

PDF, 72 KB

english, 1997

8

The accumulation channel driven bipolar transistor (ACBT)

Thapar, N., Baliga, B.J.

Journal:

IEEE Electron Device Letters

Year:

1997

Language:

english

File:

PDF, 71 KB

english, 1997

9

Monolithic Schottky-collector resonant tunnel diode oscillator arrays to 650 GHz

Reddy, M., Martin, S.C., Molnar, A.C., Muller, R.E., Smith, R.P., Siegel, P.H., Mondry, M.J., Rodwell, M.J.W., Kroemer, H., Allen, S.J.

Journal:

IEEE Electron Device Letters

Year:

1997

Language:

english

File:

PDF, 86 KB

english, 1997

10

50-nm channel nMOSFET/SIMOX with an ultrathin 2- or 6-nm thick silicon layer and their significant features of operations

Omura, Y., Kurihara, K., Takahashi, Y., Ishiyama, T., Nakajima, Y., Izumi, K.

Journal:

IEEE Electron Device Letters

Year:

1997

Language:

english

File:

PDF, 123 KB

english, 1997

11

Nitridation of silicon-dioxide films grown on 6H silicon carbide

Dimitrijev, S., Hui-Feng Li,, Harrison, H.B., Sweatman, D.

Journal:

IEEE Electron Device Letters

Year:

1997

Language:

english

File:

PDF, 57 KB

english, 1997

12

High-temperature, high-voltage operation of pulse-doped diamond MESFET

Vescan, A., Gluche, P., Ebert, W., Kohn, E.

Journal:

IEEE Electron Device Letters

Year:

1997

Language:

english

File:

PDF, 93 KB

english, 1997

13

The electrostatic charging damage on the characteristics and reliability of polysilicon thin-film transistors during plasma hydrogenation

Kan-Yuan Lee,, Yean-Kuen Fang,, Chii-Wen Chen,, Huang, K.C., Mong-Song Liang,, Wuu, G.

Journal:

IEEE Electron Device Letters

Year:

1997

Language:

english

File:

PDF, 54 KB

english, 1997

14

Impact of boron penetration at P/sup +/-poly/gate oxide interface on deep-submicron device reliability for dual-gate CMOS technologies

Ming-Yin Hao,, Nayak, D., Rakkit, R.

Journal:

IEEE Electron Device Letters

Year:

1997

Language:

english

File:

PDF, 85 KB

english, 1997

15

Experimental determination of electron and hole mobilities in MOS accumulation layers

McKeon, J.B., Chindalore, G., Hareland, S.A., Shih, W.-K., Wang, C., Tasch, A.F., Maziar, C.M.

Journal:

IEEE Electron Device Letters

Year:

1997

Language:

english

File:

PDF, 80 KB

english, 1997

16

Preventing boron penetration through 25-/spl Aring/ gate oxides with nitrogen implant in the Si substrates

Liu, C.T., Ma, Y., Luftman, H., Hillenius, S.J.

Journal:

IEEE Electron Device Letters

Year:

1997

Language:

english

File:

PDF, 83 KB

english, 1997

17

A novel stack structure to improve the degradation of W-polycide gated MOS device with undoped a-Si/heavily-doped poly-Si multilayer

Kan-Yuan Lee,, Yean-Kuen Fang,, Chii-Wen Chen,, Mong-Song Liang,, Jang-Cheng Hsieh,

Journal:

IEEE Electron Device Letters

Year:

1997

Language:

english

File:

PDF, 52 KB

english, 1997

18

Electron mobility in ULSI MOSFETs: effect of interface traps and oxide nitridation

Perron, L., Lacaita, A.L., Pacelli, A., Bez, R.

Journal:

IEEE Electron Device Letters

Year:

1997

Language:

english

File:

PDF, 82 KB

english, 1997

19

Short-timescale thermal mapping of semiconductor devices

Ju, S., Kading, O.W., Leung, Y.K., Wong, S.S., Goodson, K.E.

Journal:

IEEE Electron Device Letters

Year:

1997

Language:

english

File:

PDF, 65 KB

english, 1997

20

The role of resist for ultrathin gate oxide degradation during O2 plasma ashing

Chao-Hsin Chien,, Chun-Yen Chang,, Horng-Chih Lin,, Shean-Guang Chiou,, Tiao-Yuan Huang,, Tsai-Fu Chang,, Szu-Kang Hsien,

Journal:

IEEE Electron Device Letters

Year:

1997

Language:

english

File:

PDF, 59 KB

english, 1997

21

Monolithic CMOS digital integrated circuits in 6H-SiC using an implanted p-well process

Ryu, S., Kornegay, K.T., Cooper, J.A., Melloch, M.R.

Journal:

IEEE Electron Device Letters

Year:

1997

Language:

english

File:

PDF, 61 KB

english, 1997

22

Enhancement of electron emission efficiency and stability of molybdenum-tip field emitter array by diamond like carbon coating

Jae Hoon Jung,, Byeoung Kwon Ja,, Yun Hi Lee,, Jin Jang,, Myung Hwan Oh,

Journal:

IEEE Electron Device Letters

Year:

1997

Language:

english

File:

PDF, 65 KB

english, 1997