Si/SiGe Resonant Interband Tunneling Diodes Incorporating...

IEEE Electron Device Letters 2009 / 11 Vol. 30; Iss. 11

Si/SiGe Resonant Interband Tunneling Diodes Incorporating $\delta$-Doping Layers Grown by Chemical Vapor Deposition

Si-Young Park,, Anisha, R., Berger, P.R., Loo, R., Ngoc Duy Nguyen,, Takeuchi, S., Caymax, M.
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Volume:
30
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2009.2030989
Date:
November, 2009
File:
PDF, 145 KB
english, 2009
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