Charge trapping in SiO2/HfO2 gate dielectrics: Comparison...

Microelectronic Engineering 2004 Vol. 72; Iss. 1-4

Charge trapping in SiO2/HfO2 gate dielectrics: Comparison between charge-pumping and pulsed ID–VG

A Kerber, E Cartier, L Pantisano, R Degraeve, G Groeseneken, H.E Maes, U Schwalke
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Volume:
72
Year:
2004
Language:
english
Pages:
6
DOI:
10.1016/j.mee.2004.01.002
File:
PDF, 455 KB
english, 2004
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