Volume 72; Issue 1-4

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Microelectronic Engineering
Volume 72; Issue 1-4

Microelectronic Engineering

Volume 72; Issue 1-4

1

Soft and hard breakdown: impact of annealing recovery on transistor performances

G. Ghidini, A. Garavaglia, G. Giusto, R. Bottini, D. Brazzelli

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 261 KB

english, 2004

2

Statistics of progressive breakdown in ultra-thin oxides

B.P. Linder, J.H. Stathis

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 232 KB

english, 2004

3

Interface trapping properties of nMOSFETs with Al2O3/SiOxNy/Si(1 0 0) gate dielectric stacks after exposure to ionizing radiation

J.A Felix, H.D Xiong, D.M Fleetwood, E.P Gusev, R.D Schrimpf, A.L Sternberg, C D’Emic

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 202 KB

english, 2004

4

Distribution of the contact-potential difference local values over the gate area of MOS structures

Henryk M. Przewlocki, Andrzej Kudla, Danuta Brzezinska, Hisham Z. Massoud

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 571 KB

english, 2004

5

Optical and electrical properties of Si1−x−yGexCy strained layers thermally oxidized

A Cuadras, J Sancho, S Bosch, B Garrido, J.R Morante, L Fonseca, K Pressel

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 204 KB

english, 2004

6

Silicon crystal distortions at the Si(1 0 0)–SiO2 interface from analysis of ion-scattering

Angelo Bongiorno, Alfredo Pasquarello, Mark S Hybertsen, L.C Feldman

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 205 KB

english, 2004

7

Electrical characterization of photo-oxidized Si1−x−yGexCy films

Peter J. Bjeletich, Jeff J. Peterson, Ángel Cuadras, Qi Fang, Jun-Ying Zhang, McDonald Robinson, Ian W. Boyd, Charles E. Hunt

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 184 KB

english, 2004

8

A new method for extracting EOT for leaky insulators

F Chen, N.P Hoilien, S.A Campbell

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 229 KB

english, 2004

9

A compact DC model of gate oxide short defect

R. Bouchakour, J.M. Portal, J.M. Gallière, F. Azais, Y. Bertrand, M. Renovell

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 250 KB

english, 2004

10

Charge trapping in SiO2/HfO2 gate dielectrics: Comparison between charge-pumping and pulsed ID–VG

A Kerber, E Cartier, L Pantisano, R Degraeve, G Groeseneken, H.E Maes, U Schwalke

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 455 KB

english, 2004

11

All oxide transparent MISFET using high-k dielectrics gates

Kenji Nomura, Hiromichi Ohta, Kazushige Ueda, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 271 KB

english, 2004

12

Chemical phase separation in Zr silicate alloys: a spectroscopic study distinguishing between chemical phase separation with different degree of micro- and nano-crystallinity

G.B. Rayner Jr., D. Kang, C.L. Hinkle, J.G. Hong, G. Lucovsky

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 440 KB

english, 2004

13

Electrical characterization and reliability aspects of zirconium silicate films obtained from novel MOCVD precursors

M Lemberger, A Paskaleva, S Zürcher, A.J Bauer, L Frey, H Ryssel

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 388 KB

english, 2004

14

Innovating SOI films: impact of thickness and temperature

N Bresson, S Cristoloveanu

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 215 KB

english, 2004

15

Self-organization in SOI FET

V.N Dobrovolsky, L.V Ishchuk, G.K Ninidze, S.P Pavljuk, Y.O Plichko

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 266 KB

english, 2004

16

Optimising flash memory tunnel programming

Fernanda Irrera, Teodoro Fristachi, Domenico Caputo, Bruno Riccò

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 223 KB

english, 2004

17

Multi-bit storage through Si nanocrystals embedded in SiO2

S. Lombardo, D. Corso, I. Crupi, C. Gerardi, G. Ammendola, M. Melanotte, B. De Salvo, L. Perniola

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 215 KB

english, 2004

18

Device architecture and reliability aspects of a novel 1.22 μm2 EEPROM cell in 0.18 μm node for embedded applications

G Tao, A Scarpa, K van Dijk, L van Marwijk, D Dormans, J Garbe, D Boter, R Verhaar

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 232 KB

english, 2004

19

Lateral charge transport in the nitride layer of the NROM non-volatile memory device

Assaf Shappir, Yosi Shacham-Diamand, Eli Lusky, Ilan Bloom, Boaz Eitan

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 473 KB

english, 2004

20

Strain characterization of strained silicon on insulator wafers

V Paillard, B Ghyselen, C Aulnette, B Osternaud, N Daval, F Fournel, H Moriceau, T Ernst, J.M Hartmann, C Lagahe-Blanchard, S Pocas, P Leduc, L Vincent, F Cristiano, Y Campidelli, O Kermarrec, P Besso

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 480 KB

english, 2004

21

Preface

Joan-Ramón Morante i Lleonart

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 115 KB

english, 2004

22

Critical evaluation of hard-breakdown based reliability methodologies for ultrathin gate oxides

W Lai, E Wu, J Suñé

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 493 KB

english, 2004

23

Impact of conductivity and size of the breakdown spot on the progressive-breakdown of thin SiO2 gate oxides

M. Porti, M. Nafrı&amp, #x0301, a, X. Aymerich

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 202 KB

english, 2004

24

Limits of the successive breakdown statistics to assess chip reliability

Jordi Suñé, Ernest Y. Wu, Wing L. Lai

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 363 KB

english, 2004

25

Incidence of oxide and interface degradation on MOSFET performance

A Cester, L Bandiera, S Cimino, A Paccagnella, G Ghidini

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 206 KB

english, 2004

26

Electron spin resonance study of the effect of applied stress during thermal oxidation of (1 1 1)Si on inherent Pb interface defects

D. Pierreux, A. Stesmans, R.J. Jaccodine, M.-T. Lin, T.J. Delph

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 189 KB

english, 2004

27

Oxygen-deficiency centers in SiO2 thermally nitrided in NO

P.G. Tello, V.V. Afanas'ev, A. Stesmans

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 185 KB

english, 2004

28

High-energy proton irradiation effects on tunnelling MOS capacitors

C Fleta, F Campabadal, J.M Rafı́, M Lozano, M Ullán

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 232 KB

english, 2004

29

Photoelectron spectroscopy of ultrathin yttrium oxide films on Si(1 0 0)

A. Ohta, M. Yamaoka, S. Miyazaki

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 635 KB

english, 2004

30

Band-to-band tunneling related effects in a thin MOS structure

M.I Vexler, A.F Shulekin, D Grgec, I.V Grekhov, B Meinerzhagen

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 211 KB

english, 2004

31

C-AFM characterization of the dependence of HfAlOx electrical behavior on post-deposition annealing temperature

X Blasco, J Pétry, M Nafrı́a, X Aymerich, O Richard, W Vandervorst

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 284 KB

english, 2004

32

Scanning capacitance microscopy and -spectroscopy on SiO2 films with embedded Ge and Si nanoclusters

R. Beyer, E. Beyreuther, J. von Borany, J. Weber

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 247 KB

english, 2004

33

Reductions in interface defects, Dit, by post oxidation plasma-assisted nitridation of GaN–SiO2 interfaces in MOS devices

C. Bae, G. Lucovsky

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 278 KB

english, 2004

34

Stress-induced leakage current at low field in NMOS and PMOS devices with ultra-thin nitrided gate oxide

M Fadlallah, G Ghibaudo, M Bidaud, O Simonetti, F Guyader

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 375 KB

english, 2004

35

Gate-oxide grown on the sidewalls and base of a U-shaped Si trench: effects of the oxide and oxide/Si interface condition on the properties of vertical MOS devices

S.A. Suliman, O.O. Awadelkarim, R.S. Ridley, G.M. Dolny

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 218 KB

english, 2004

36

Electrical characterization of TiO2 gate oxides on strained-Si

C.K. Maiti, S.K. Samanta, G.K. Dalapati, S.K. Nandi, S. Chatterjee

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 190 KB

english, 2004

37

A novel approach for determining the effective tunneling mass of electrons in HfO2 and other high-K alternative gate dielectrics for advanced CMOS devices

C.L Hinkle, C Fulton, R.J Nemanich, G Lucovsky

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 224 KB

english, 2004

38

Characterization and modeling of nanometric SiO2 dielectrics

C. Leroux, P. Mur, N. Rochat, D. Rouchon, R. Truche, G. Reimbold, G. Ghibaudo

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 251 KB

english, 2004

39

A study of mixtures of HfO2 and TiO2 as high-k gate dielectrics

F. Chen, X. Bin, C. Hella, X. Shi, W.L. Gladfelter, S.A. Campbell

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 189 KB

english, 2004

40

Charge trapping and detrapping in HfO2 high-κ gate stacks

E.P Gusev, C D'Emic, S Zafar, A Kumar

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 221 KB

english, 2004

41

Composition, chemical structure, and electronic band structure of rare earth oxide/Si(1 0 0) interfacial transition layer

T Hattori, T Yoshida, T Shiraishi, K Takahashi, H Nohira, S Joumori, K Nakajima, M Suzuki, K Kimura, I Kashiwagi, C Ohshima, S Ohmi, H Iwai

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 192 KB

english, 2004

42

Electrical characterization of SrTiO3 thin films deposited on Si(0 0 1) substrate by liquid injection MOCVD

J. Legrand, S. Lhostis, Y. Chang, L. Militaru, C. Lamard, A. Sibai, L. Auvray, M. Audier, J.-P. Sénateur, C. Dubourdieu, F. Ducroquet

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 386 KB

english, 2004

43

Dielectric effect of a thin SiO2 interlayer at the interface between silicon and high-k oxides

Feliciano Giustino, Paolo Umari, Alfredo Pasquarello

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 205 KB

english, 2004

44

Studying of hot-carrier effect in floating body SOI MOSFETs by the transient charge pumping technique

Mikhail Nagoga, Serguei Okhonin, Pierre Fazan

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 264 KB

english, 2004

45

A specific floating-body effect in fully depleted SOI MOSFETs with ultra-thin gate oxide

M Cassé, J Prétet, S Cristoloveanu, T Poiroux, C Raynaud, G Reimbold

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 216 KB

english, 2004

46

Model of P–N+ junction in thin SOI MOS structures

Valentin N Dobrovolsky, Sorin Cristoloveanu

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 205 KB

english, 2004

47

Silicon nanocrystal memories

S. Lombardo, B. De Salvo, C. Gerardi, T. Baron

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 474 KB

english, 2004

48

A new memory concept: the nano-multiple-tunnel-junction memory with embedded Si nano-crystals

D Deleruyelle, C Le Royer, B DeSalvo, G Le Carval, M Gely, T Baron, J.L Autran, S Deleonibus

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 494 KB

english, 2004

49

Subthreshold slope modulation in G4-FET transistors

B. Dufrene, B. Blalock, S. Cristoloveanu, K. Akarvardar, T. Higashino, M. Mojarradi

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 299 KB

english, 2004

50

New concept of high-k integration in MOSFET’s by a deposition through contact holes

S Harrison, P Coronel, F Wacquant, C Regnier, F Leverd, A Beverina, J Bustos, B Tavel, T Skotnicki

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 414 KB

english, 2004

51

Generation of metastable electron traps in the near interfacial region of SOI buried oxides by ion implantation and their effect on device properties

J.R Schwank, D.M Fleetwood, H.D Xiong, M.R Shaneyfelt, B.L Draper

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 217 KB

english, 2004

52

Nature and location of interface traps in RF LDMOS due to hot carriers

T. Nigam, A. Shibib, S. Xu, H. Safar, L. Steinberg

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 387 KB

english, 2004

53

Editorial board

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 15 KB

english, 2004

54

Table of contents

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 158 KB

english, 2004

55

Author index

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 168 KB

english, 2004

56

Committees

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 110 KB

english, 2004

57

Effect and model of gate oxide breakdown on CMOS inverters

R Rodrı́guez, J.H Stathis, B.P Linder

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 207 KB

english, 2004

58

Reliability of MOS devices with tungsten gates

F. Palumbo, S. Lombardo, J.H. Stathis, V. Narayanan, F.R. McFeely, J.J. Yurkas

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 193 KB

english, 2004

59

Corona charging damage on thermal Si/SiO2 structures with nm-thick oxides revealed by electron spin resonance

A Stesmans, V.V Afanas'ev

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 220 KB

english, 2004

60

Weibull slope and voltage acceleration of ultra-thin (1.1–1.45 nm EOT) oxynitrides

Robert O'Connor, Robin Degraeve, Ben Kaczer, Anabela Veloso, Greg Hughes, Guido Groeseneken

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 199 KB

english, 2004

61

Effect of fixed dielectric charges on tunnelling transparency in MIM and MIS structures

S Bernardini, P Masson, M Houssa

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 211 KB

english, 2004

62

Comparison of resonant tunneling currents in double gate MOS diodes with metal and poly-silicon gates

Bogdan Majkusiak

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 212 KB

english, 2004

63

Temperature and drain voltage dependence of gate-induced drain leakage

L Lopez, P Masson, D Née, R Bouchakour

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 199 KB

english, 2004

64

Deep hole trapping effects in the degradation mechanisms of 6.5–2 nm thick gate-oxide PMOSFETs

A Bravaix, D Goguenheim, N Revil, E Vincent

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 255 KB

english, 2004

65

Atomic structure, band offsets, growth and defects at high-K oxide:Si interfaces

J Robertson, P.W Peacock

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 350 KB

english, 2004

66

Modeling pFET currents after soft breakdown at different gate locations

B. Kaczer, A. De Keersgieter, R. Degraeve, F. Crupi, G. Groeseneken

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 245 KB

english, 2004

67

Silicon surface treatments in advanced MOS gate processing

K. Chang, K. Shanmugasundaram, D.O. Lee, P. Roman, C.-T. Wu, J. Wang, J. Shallenberger, P. Mumbauer, R. Grant, R. Ridley, G. Dolny, J. Ruzyllo

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 248 KB

english, 2004

68

Consistent model for the voltage and temperature dependence of the soft breakdown conduction mechanism in ultrathin gate oxides

A Avellán, E Miranda, D Schroeder, W Krautschneider

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 302 KB

english, 2004

69

Effect of N2 anneal on thin HfO2 layers studied by conductive atomic force microscopy

J Pétry, W Vandervorst, X Blasco

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 343 KB

english, 2004

70

Infrared spectra of photochemically grown suboxides and oxynitrides at the Si/SiO2 interface

Peter Hess, Jochen Lambers

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 742 KB

english, 2004

71

Analysis of the electron traps at the 4H-SiC/SiO2 interface using combined CV/thermally stimulated current measurements

T.E. Rudenko, H.Ö. Ólafsson, E.Ö. Sveinbjörnsson, I.P. Osiyuk, I.P. Tyagulski

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 233 KB

english, 2004

72

Transmission lines fabricated with CMOS interconnect technology

Guo Lihui, Zhang Yibin, Jeffrey Su Yong Jie

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 211 KB

english, 2004

73

Recent developments in deca-nanometer vertical MOSFETs

S Hall, D Donaghy, O Buiu, E Gili, T Uchino, V.D Kunz, C.H de Groot, P Ashburn

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 400 KB

english, 2004

74

Breakdown mechanisms in ultra-thin oxides: impact of carrier energy and current through substrate hot carrier stress study

G Ribes, S Bruyère, M Denais, F Monsieur, V Huard, D Roy, G Ghibaudo

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 241 KB

english, 2004

75

Hole trapping in HfO2 insulators on Si(1 0 0)

V.V. Afanas’ev, A. Stesmans

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 181 KB

english, 2004

76

Surface preparation and post thermal treatment effects on interface properties of thin Al2O3 films deposited by ALD

Y. Chang, F. Ducroquet, E. Gautier, O. Renault, J. Legrand, J.F. Damlencourt, F. Martin

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 412 KB

english, 2004

77

Influence of total-dose radiation on the electrical characteristics of SOI MOSFETs

J.A. Felix, J.R. Schwank, C.R. Cirba, R.D. Schrimpf, M.R. Shaneyfelt, D.M. Fleetwood, P.E. Dodd

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 503 KB

english, 2004

78

Image and exchange-correlation effects in double gate silicon-on-insulator transistors

F Gámiz, P Cartujo-Cassinello, F Jiménez-Molinos, J.E Carceller, P Cartujo

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 203 KB

english, 2004

79

Oxide–nitride–oxide layer optimisation for reliable embedded SONOS memories

Rob van Schaijk, Michiel van Duuren, Wan Yuet Mei, Kees van der Jeugd, Aude Rothschild, Marc Demand

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 212 KB

english, 2004

80

Mechanisms of charge modulation in the floating body of triple-well nMOSFET capacitor-less DRAMs

A. Villaret, R. Ranica, P. Masson, P. Malinge, P. Mazoyer, P. Candelier, F. Jacquet, S. Cristoloveanu, T. Skotnicki

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 264 KB

english, 2004

81

The RF-CV method for characterization of leaky gate dielectrics

J. Schmitz, F.N. Cubaynes, R. de Kort, R. Havens, A.J. Scholten, L.F. Tiemeijer

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 217 KB

english, 2004

82

EEPROM memory stack with scaled down thickness

Ruth Shima Edelstein, Chris Cork, Efraim Aloni, Nachi Vofsy, Yakov Roizin

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 360 KB

english, 2004

83

Separate and independent control of interfacial band alignments and dielectric constants in transition metal rare earth complex oxides

G. Lucovsky, Y. Zhang, J.L. Whitten, D.G. Schlom, J.L. Freeouf

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 256 KB

english, 2004

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