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Effective mobility in FinFET structures with HfO2 and SiON gate dielectrics and TaN gate electrode
T. Rudenko, N. Collaert, S. De Gendt, V. Kilchytska, M. Jurczak, D. FlandreVolume:
80
Year:
2005
Language:
english
Pages:
4
DOI:
10.1016/j.mee.2005.04.026
File:
PDF, 156 KB
english, 2005