Volume 80; Issue none

Main
Microelectronic Engineering
Volume 80; Issue none

Microelectronic Engineering

Volume 80; Issue none

1

Contribution of fast and slow states to Negative Bias Temperature Instabilities in HfxSi(1-x)ON/TaN based pMOSFETs

M. Aoulaiche, M. Houssa, R. De graeve, G. Groeseneken, S. De Gendt, M.M. Heyns

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 245 KB

english, 2005

2

Inelastic tunneling spectra of an alkyl self-assembled monolayer using a MOS tunnel junction as a test-bed

C. Petit, G. Salace, S. Lenfant, D. Vuillaume

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 262 KB

english, 2005

3

Laterally resolved electrical characterisation of high-K oxides with non-contact Atomic Force Microscopy

J.M. Sturm, A.I. Zinine, H. Wormeester, R.G. Bankras, J. Holleman, J. Schmitz, Bene Poelsema

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 1.36 MB

english, 2005

4

Use of ferroelectric gate insulator for thin film transistors with ITO channel

E. Tokumitsu, M. Senoo, T. Miyasako

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 313 KB

english, 2005

5

MIM capacitors using amorphous high-k PrTixOy dielectrics

Ch. Wenger, R. Sorge, T. Schroeder, A.U. Mane, G. Lippert, G. Lupina, J. Dąbrowski, P. Zaumseil, H.-J. Muessig

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 229 KB

english, 2005

6

Impact of H2/N2 annealing on interface defect densities in Si(100)/SiO2/HfO2/TiN gate stacks

M. Schmidt, M.C. Lemme, H. Kurz, T. Witters, T. Schram, K. Cherkaoui, A. Negara, P.K. Hurley

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 190 KB

english, 2005

7

Infrared properties of ultrathin oxides on Si(1 0 0)

Feliciano Giustino, Alfredo Pasquarello

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 345 KB

english, 2005

8

Effective mobility in FinFET structures with HfO2 and SiON gate dielectrics and TaN gate electrode

T. Rudenko, N. Collaert, S. De Gendt, V. Kilchytska, M. Jurczak, D. Flandre

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 156 KB

english, 2005

9

Interface state generation in pFETs with ultra-thin oxide and oxynitride on (100) and (110) Si substrates

J.H. Stathis, R. Bolam, M. Yang, T.B. Hook, A. Chou, G. Larosa

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 178 KB

english, 2005

10

Impact of post-deposition-annealing on the electrical characteristics of HfOxNy gate dielectric on Ge substrate

Chao-Ching Cheng, Chao-Hsin Chien, Ching-Wei Chen, Shih-Lu Hsu, Ming-Yi Yang, Chien-Chao Huang, Fu-Liang Yang, Chun-Yen Chang

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 220 KB

english, 2005

11

Work function controllability of metal gates made by interdiffusing metal stacks with low and high work functions

T. Matsukawa, Y.X. Liu, M. Masahara, K. Ishii, K. Endo, H. Yamauchi, E. Sugimata, H. Takashima, T. Higashino, E. Suzuki, S. Kanemaru

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 714 KB

english, 2005

12

Ge based high performance nanoscale MOSFETs

Krishna C. Saraswat, Chi On Chui, Tejas Krishnamohan, Ammar Nayfeh, Paul McIntyre

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 1.28 MB

english, 2005

13

Point defects at interfacial layers in stacks of (100)Ge with nm-thin HfO2 and GeOx(Ny) insulators probed by electron spin resonance

A. Stesmans, V.V. Afanas’ev

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 168 KB

english, 2005

14

Impact of Al incorporation in hafnia on interface states in (100)Si/HfAlxOy

Y.G. Fedorenko, V.V. Afanas’ev, A. Stesmans

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 273 KB

english, 2005

15

Gate dielectrics on compound semiconductors

R. Droopad, M. Passlack, N. England, K. Rajagopalan, J. Abrokwah, A. Kummel

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 587 KB

english, 2005

16

LaAlO3 films prepared by MBE on LaAlO3(001) and Si(001) substrates

S. Gaillard, Y. Rozier, C. Merckling, F. Ducroquet, M. Gendry, G. Hollinger

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 369 KB

english, 2005

17

Accurate assessment of the time-to-failure of hyper-thin gate oxides subjected to constant electrical stress using a logistic-type model

F. Palumbo, E. Miranda, S. Lombardo

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 227 KB

english, 2005

18

Study of breakdown in ultrathin gate dielectrics using constant voltage stress and successive constant voltage stress

L.J. Tang, K.L. Pey, C.H. Tung, R. Ranjan, W.H. Lin

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 377 KB

english, 2005

19

Impact of Fowler-Nordheim and channel hot carrier stresses on MOSFETs with 2.2nm gate oxide

S. Gerardin, A. Cester, A. Paccagnella, G. Ghidini

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 321 KB

english, 2005

20

Understanding oxide degradation mechanisms in ultra-thin SiO2 through high-speed, high-resolution in-situ measurements

S. Aresu, W. De Ceuninck, R. Degraeve, B. Kaczer, G. Knuyt, L. De Schepper

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 219 KB

english, 2005

21

Reduction of fixed charges in atomic layer deposited Al2O3 dielectrics

J. Buckley, B. De Salvo, D. Deleruyelle, M. Gely, G. Nicotra, S. Lombardo, J.F. Damlencourt, Ph. Hollinger, F. Martin, S. Deleonibus

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 429 KB

english, 2005

22

First-principle calculations on gate/dielectric interfaces: on the origin of work function shifts

G. Pourtois, A. Lauwers, J. Kittl, L. Pantisano, B. Sorée, S. De Gendt, W. Magnus, M. Heyns, K. Maex

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 539 KB

english, 2005

23

Ab initio study of charged states of H in amorphous SiO2

Julien Godet, Alfredo Pasquarello

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 310 KB

english, 2005

24

Current status and challenges of ferroelectric memory devices

H. Kohlstedt, Y. Mustafa, A. Gerber, A. Petraru, M. Fitsilis, R. Meyer, U. Böttger, R Waser

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 223 KB

english, 2005

25

Recent developments on Flash memory reliability

D. Ielmini, A.S. Spinelli, A.L. Lacaita

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 648 KB

english, 2005

26

New Charge Pumping model for the analysis of the spatial trap distribution in the nitride layer of SONOS devices

A. Arreghini, F. Driussi, D. Esseni, L. Selmi, M.J. van Duuren, R. van Schaijk

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 512 KB

english, 2005

27

Bias-stress-induced evolution of the dielectric properties of porous-ULK/ copper advanced interconnects

C. Guedj, X. Portier, F. Mondon, V. Arnal, J.F. Guillaumond, L. Arnaud, J.P. Barnes, V. Jousseaume, A. Roule, S. Maitrejean, L.L. Chapelon, G. Reimbold, J. Torres, G. Passemard

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 418 KB

english, 2005

28

Repair and capping of porous MSQ films using chlorosilanes and supercritical CO2

B. Xie, L. Choate, A.J. Muscat

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 272 KB

english, 2005

29

HfO2/spacer-interface breakdown in HfO2 high-κ/poly-silicon gate stacks

R. Ranjan, K.L. Pey, C.H. Tung, L.J. Tang, B. Elattari, T. Kauerauf, G. Groeseneken, R. Degraeve, D.S. Ang, L.K. Bera

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 2.37 MB

english, 2005

30

An approach to modeling of silicon oxidationin a wet ultra-diluted ambient

Alexey Kovalgin, Andre Hof, Jurriaan Schmitz

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 191 KB

english, 2005

31

Electron mobility in multi-FinFET with a (111) channel surface fabricated by orientation-dependent wet etching

Y.X. Liu, E. Sugimata, M. Masahara, K. Endo, K. Ishii, T. Matsukawa, H. Takashima, H. Yamauchi, E. Suzuki

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 330 KB

english, 2005

32

Comparison on the effects of defects at Si(111) and Si(100) surface on electrical characteristics of MOS devices with HfOxNy gate dielectric

Chin-Lung Cheng, Kuei-Shu Chang-Liao, Tien-Ko Wang

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 341 KB

english, 2005

33

Investigation of simultaneous fluorine and carbon incorporation in a silicon oxide dielectric layer grown by PECVD

S. Altshuler, Y. Chakk, A. Rozenblat, A. Cohen

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 208 KB

english, 2005

34

Properties and dynamic behavior of electron traps in HfO2/SiO2 stacks

C.Z. Zhao, M.B. Zahid, J.F. Zhang, G. Groeseneken, R. Degraeve, S. De Gendt

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 164 KB

english, 2005

35

Impact of high-k gate stack material with metal gates on LF noise in n- and p-MOSFETs

P. Srinivasan, E. Simoen, L. Pantisano, C. Claeys, D. Misra

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 295 KB

english, 2005

36

Single Hf atoms inside the ultrathin SiO2 interlayer between a HfO2 dielectric film and the Si substrate: How do they modify the interface?

S.N. Rashkeev, K. van Benthem, S.T. Pantelides, S.J. Pennycook

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 363 KB

english, 2005

37

Dielectric breakdown in SiO2 via electric field induced attached hydrogen defects

Jamil Tahir-Kheli, M. Miyata, W.A. Goddard III

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 219 KB

english, 2005

38

Application of high-κ gate dielectrics and metal gate electrodes to enable silicon and non-silicon logic nanotechnology

Robert Chau, Justin Brask, Suman Datta, Gilbert Dewey, Mark Doczy, Brian Doyle, Jack Kavalieros, Ben Jin, Matthew Metz, Amlan Majumdar, Marko Radosavljevic

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 327 KB

english, 2005

39

Influence of TiN metal gate on Si/SiO2 surface roughness in N and PMOSFETs

L. Thevenod, M. Cassé, M. Mouis, G. Reimbold, F. Fillot, B. Guillaumot, F. Boulanger

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 287 KB

english, 2005

40

Optimisation of a thin epitaxial Si layer as Ge passivation layer to demonstrate deep sub-micron n- and p-FETs on Ge-On-Insulator substrates

B. De Jaeger, R. Bonzom, F. Leys, O. Richard, J. Van Steenbergen, G. Winderickx, E. Van Moorhem, G. Raskin, F. Letertre, T. Billon, M. Meuris, M. Heyns

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 648 KB

english, 2005

41

Characterization of interface state densitiesby photocurrent analysis: comparison of results for different insulator layers

M. Rommel, M. Groß, A. Ettinger, M. Lemberger, A.J. Bauer, L. Frey, H. Ryssel

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 165 KB

english, 2005

42

Oxide traps characterization of 45 nm MOS transistors by gate current R.T.S. noise measurements

F. Martinez, C. Leyris, G. Neau, M. Valenza, A. Hoffmann, J.C. Vildeuil, E. Vincent, F. Boeuf, T. Skotnicki, M. Bidaud, D. Barge, B. Tavel

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 247 KB

english, 2005

43

Band alignment between (1 0 0)Si and Hf-based complex metal oxides

V.V. Afanas’ev, A. Stesmans, C. Zhao, M. Caymax, Z.M. Rittersma, J.W. Maes

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 164 KB

english, 2005

44

Intrinsic band edge traps in nano-crystalline HfO2 gate dielectrics

G. Lucovsky, Y. Zhang, J. Luning, V.V. Afanase’v, A. Stesmans, S. Zollner, D. Triyoso, B.R. Rogers, J.L. Whitten

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 319 KB

english, 2005

45

Rare-earth scandate single- and multi-layer thin films as alternative gate oxides for microelectronic applications

T. Heeg, M. Wagner, J. Schubert, Ch. Buchal, M. Boese, M. Luysberg, E. Cicerrella, J.L. Freeouf

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 642 KB

english, 2005

46

Growth of gadolinium oxide films for advanced MOS structure

R. Lupták, K. Fröhlich, A. Rosová, K. Hušeková, M. Ťapajna, D. Machajdı́k, M. Jergel, J.P. Espinós, C. Mansilla

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 331 KB

english, 2005

47

Deposition of 60 nm thin Sr0.8Bi2.2Ta2O9 layers for application in scaled 1T1C and 1T FeRAM devices

L. Goux, Z. Xu, B. Kaczer, G. Groeseneken, D.J. Wouters

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 1.29 MB

english, 2005

48

Edge and percolation effects on VT window in nanocrystal memories

R. Gusmeroli, A.S. Spinelli, C. Monzio Compagnoni, D. Ielmini, A.L. Lacaita

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 257 KB

english, 2005

49

PVD-HfSiON gate dielectrics with Ni-FUSI electrode for 65nm LSTP application

K. Yamamoto, S. Kubicek, A. Rothschild, R. Mitsuhashi, W. Deweerd, A. Veloso, M. Jurczak, S. Biesemans, S. De Gendt, S. Wickramanayaka, S. Hayashi, M. Niwa

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 320 KB

english, 2005

50

Performance improvement of n-MOSFETs with constituent gradient HfO2/SiO2 interface

K. Iwamoto, A. Ogawa, T. Nabatame, H. Satake, A. Toriumi

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 462 KB

english, 2005

51

Ultra-thin strained SOI substrate analysis by pseudo-MOS measurements

C. Gallon, C. Fenouillet-Beranger, N. Bresson, S. Cristoloveanu, F. Allibert, S. Bord, C. Aulnette, D. Delille, E. Latu-Romain, J.M. Hartmann, T. Ernst, F. Andrieu, Y. Campidelli, B. Ghyselen, I. Cayr

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 302 KB

english, 2005

52

Al2O3 with Metal-Nitride nanocrystals as a charge trapping layer of MONOS-type nonvolatile memory devices

S. Choi, S.S. Kim, H. Yang, M. Chang, S. Jeon, C. Kim, D.Y. Kim, H. Hwang

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 388 KB

english, 2005

53

A nanoscale approach to the electrical properties of MOS memory devices with Si-nanocrystals

M. Porti, M. Avidano, M. Nafrı́a, X. Aymerich, J. Carreras, B. Garrido

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 244 KB

english, 2005

54

Oxygen vacancies in amorphous silica: structure and distribution of properties

P.V. Sushko, S. Mukhopadhyay, A.M. Stoneham, A.L. Shluger

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 231 KB

english, 2005

55

Challenges in the implementation of low-k dielectrics in the back-end of line

R.J.O.M. Hoofman, G.J.A.M. Verheijden, J. Michelon, F. Iacopi, Y. Travaly, M.R. Baklanov, Zs. Tökei, G.P. Beyer

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 435 KB

english, 2005

56

Breakdowns in high-k gate stacks of nano-scale CMOS devices

K.L. Pey, R. Ranjan, C.H. Tung, L.J. Tang, V.L. Lo, K.S. Lim, T.A/L. Selvarajoo, D.S. Ang

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 1.45 MB

english, 2005

57

Investigation on trapping and detrapping mechanisms in HfO2 films

J. Mitard, C. Leroux, G. Ghibaudo, G. Reimbold, X. Garros, B. Guillaumot, F. Boulanger

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 419 KB

english, 2005

58

Thickness-dependent power-law of dielectric breakdown in ultrathin NMOS gate oxides

A. Hiraiwa, D. Ishikawa

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 447 KB

english, 2005

59

Multiple gate devices: advantages and challenges

T. Poiroux, M. Vinet, O. Faynot, J. Widiez, J. Lolivier, T. Ernst, B. Previtali, S. Deleonibus

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 1.34 MB

english, 2005

60

Organic field effect transistor based on a novel soluble pentacene precursor and operating at low voltages

Damien Zander, Norbert Hoffmann, Kamal Lmimouni, Stephane Lenfant, Christian Petit, Dominique Vuillaume

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 313 KB

english, 2005

61

Ab initio modeling of structure and defects at the HfO2/Si interface

J.L. Gavartin, L. Fonseca, G. Bersuker, A.L Shluger

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 173 KB

english, 2005

62

Point defects in HfO2 high K gate oxide

K Xiong, J. Robertson

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 412 KB

english, 2005

63

Novel fabrication process to realize ultra-thin (EOT = 0.7 nm) and ultra-low-leakage SiON gate dielectrics

D. Matsushita, K. Muraoka, K. Kato, Y. Nakasaki, S. Inumiya, K. Eguchi, M. Takayanagi

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 784 KB

english, 2005

64

On the trap generation rate in ultrathin SiON under Constant Voltage Stress

R. Degraeve, B. Kaczer, Ph. Roussel, G. Groeseneken

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 215 KB

english, 2005

65

Polarity dependent generation of gate-side and substrate-side oxide border traps in nitrided gate oxides

M. Florian Beug, Rüdiger Ferretti, Karl R. Hofmann

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 385 KB

english, 2005

66

Editorial board

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 30 KB

english, 2005

67

Editorial board

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 15 KB

english, 2005

68

Table of Contents

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 172 KB

english, 2005

69

Author Index

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 188 KB

english, 2005

70

Preface

Guido Groeseneken, Ben Kaczer

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 114 KB

english, 2005

71

INFOS 2005 Conference committees

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 15 KB

english, 2005

72

Acknowledgments

Journal:

Microelectronic Engineering

Year:

2005

File:

PDF, 96 KB

2005

73

Reproducible resistance switching characteristics of pulsed laserdeposited polycrystalline Nb2O5

Hyunjun Sim, Dooho Choi, Dongsoo Lee, Musarrat Hasan, Chandan B. Samantaray, Hyunsang Hwang

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 1.37 MB

english, 2005

74

Short minority carrier response time in HfO2 /Ge metal-insulator-semiconductor capacitors

A. Dimoulas, G. Vellianitis, G. Mavrou, E.K. Evangelou, K. Argyropoulos, M. Houssa

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 326 KB

english, 2005

75

Effects of low temperature annealing on the ultrathin La2O3 gate dielectric; comparison of post deposition annealing and post metallization annealing

J.A. Ng, Y. Kuroki, N. Sugii, K. Kakushima, S.-I. Ohmi, K. Tsutsui, T. Hattori, H. Iwai, H. Wong

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 346 KB

english, 2005

76

The electrical properties of Metal–Ferroelectric (PbZr0.53Ti0.47O3)–Insulator–Silicon (MFIS) capacitors with different insulator materials

Pi-chun Juan, Yu-ping Hu, Fu-chien Chiu, Joseph Ya-min Lee

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 330 KB

english, 2005

77

Abrupt model interface for the 4H(1000)SiC-SiO2 interface

Fabien Devynck, Feliciano Giustino, Alfredo Pasquarello

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 478 KB

english, 2005

78

Stable electrochemically passivated Si surfaces by ultra thin benzene-type layers

J. Rappich, P. Hartig, N.H. Nickel, I. Sieber, S. Schulze, Th. Dittrich

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 590 KB

english, 2005

79

Low temperature crystallized Ta2O5/Nb2O5 bi-layers integrated into RIR capacitor for 60 nm generation and beyond

Kyuho Cho, Jinil Lee, Jae-Soon Lim, Hanjin Lim, Junghyun Lee, Sungho Park, Cha-Young Yoo, Sung-Tae Kim, U-In Chung, Joo-Tae Moon

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 350 KB

english, 2005

80

45nm LSTP FET with FUSI Gate on PVD-HfO2 with excellent drivability by advanced PDA treatment

R. Mitsuhashi, K. Yamamoto, S. Hayashi, A. Rothschild, S. Kubicek, A. Veloso, S. Van Elshocht, M. Jurczak, S. De Gendt, S. Biesemans, M. Niwa

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 428 KB

english, 2005

81

The characterization of stacked α-Si/SiGe/α-Si sensing membrane

Chia-Ming Yang, Chao-Sung Lai, Chih-Yao Wang, Cheng-En Lue, Jung-Chung Chou, Wen-Yaw Chung, Dorota G. Pijanowska

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 279 KB

english, 2005

82

Charge trapping and detrapping in HfO2 high-κ MOS capacitors using internal photoemission

D. Felnhofer, E.P. Gusev, P. Jamison, D.A. Buchanan

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 165 KB

english, 2005

83

Analysis of defects at the interface between high-k thin films and (1 0 0) silicon

B.J. Jones, R.C. Barklie

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 209 KB

english, 2005

84

Barrier permeation effects on the inversion layer subband structure and its applications to the electron mobility

G.S. Lujan, W. Magnus, B. Sorée, L-Å Ragnarsson, L. Trojman, S. Kubicek, S. De Gendt, M. Heyns, K. De Meyer

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 172 KB

english, 2005

85

Investigating physical and chemical changes in high-k gate stacks using nanoanalytical electron microscopy

A.J. Craven, M. MacKenzie, D.W. McComb, F.T. Docherty

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 600 KB

english, 2005

86

Angle-resolved XPS study on chemical bonds in ultrathin silicon oxynitride films

S. Shinagawa, H. Nohira, T. Ikuta, M. Hori, M. Kase, T. Hattori

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 329 KB

english, 2005

87

Characterization of high and low k dielectrica using low-energy Time of Flight Elastic Recoil Detection

B. Brijs, T. Sajavaara, S. Giangrandi, K. Arstila, A. Vantomme, W. Vandervorst

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 548 KB

english, 2005

88

Negative Bias Temperature Instability in CMOS Devices

S. Mahapatra, M.A. Alam, P. Bharath Kumar, T.R. Dalei, D. Varghese, D. Saha

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 258 KB

english, 2005

89

Negative bias temperature instability (NBTI) in SiO2 and SiON gate dielectrics understood through disorder-controlled kinetics

B. Kaczer, V. Arkhipov, M. Jurczak, G. Groeseneken

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 165 KB

english, 2005

90

Positive Bias Temperature Instability in nMOSFETs with ultra-thin Hf-silicate gate dielectrics

F. Crupi, C. Pace, G. Cocorullo, G. Groeseneken, M. Aoulaiche, M. Houssa

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 159 KB

english, 2005

91

Chemically conformal deposition of SrTiO3 thin films by Atomic Layer Deposition using conventional metal organic precursors and remote-plasma activated H2O

Sang Woon Lee, Oh Seong Kwon, Cheol Seong Hwang

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 342 KB

english, 2005

92

Advantages of HfAlON gate dielectric film for advanced low power CMOS application

A. Toriumi, K. Iwamoto, H. Ota, M. Kadoshima, W. Mizubayashi, T. Nabatame, A. Ogawa, K. Tominaga, T. Horikawa, H. Satake

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 723 KB

english, 2005

93

Performance and new effects in advanced SOI devices and materials

Francis Balestra, Jalal Jomaah

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 432 KB

english, 2005

94

Effects of ALD HfO2 thickness on charge trapping and mobility

J.H. Sim, S.C. Song, P.D. Kirsch, C.D. Young, R. Choi, D.L. Kwong, B.H. Lee, G. Bersuker

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 349 KB

english, 2005

95

Electrical properties of high-k HfO2 films on Si1−xGex substrates

Tae Joo Park, Seong Keun Kim, Jeong Hwan Kim, Jaehoo Park, Moonju Cho, Suk Woo Lee, Sug Hun Hong, Cheol Seong Hwang

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 399 KB

english, 2005

96

Coupling effect between the front and back interfaces in thin SOI MOSFETs

A. Ohata, S. Cristoloveanu, A. Vandooren, M. Cassé, F. Daugé

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 398 KB

english, 2005

97

Innovative technologies for high density non-volatile semiconductor memories

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 356 KB

english, 2005

98

Two-bit SONOS type Flash using a band engineering in the nitride layer

Hua-Ching Chien, Chin-Hsing Kao, Jui-Wen Chang, Tzung-Kuen Tsai

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 258 KB

english, 2005

99

Metal gate work function extraction using Fowler-Nordheim tunneling techniques

G. Sjöblom, L. Pantisano, T. Schram, J. Olsson, V. Afanas’ev, M. Heyns

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 182 KB

english, 2005

100

Device degradation model for polysilicon-oxide-nitride-oxide-silicon (SONOS) based on anode hole fluence

Jeong-Hyong Yi, Sang-Don Lee, Jin-Hong Ahn, Hyungcheol Shin, Young-June Park, Hong Shick Min

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 551 KB

english, 2005

101

Ab-initio simulations on growth and interface properties of epitaxial oxides on silicon

C.J. Först, C.R. Ashman, K. Schwarz, P.E. Blöchl

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 449 KB

english, 2005

102

Comparison of electric properties of ultra-thin thermal and plasma nitrided silicon oxides with different post-deposition treatments using C-AFM

W. Polspoel, W. Vandervorst, J. Pétry, T. Conard, A. Benedetti

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 933 KB

english, 2005

103

Semiconductor and insulator nanostructures: challenges and opportunities

C.V. Cojocaru, F. Ratto, C. Harnagea, A. Pignolet, F. Rosei

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 638 KB

english, 2005

104

Effect of the dielectric thickness and the metal deposition technique on the mobility for HfO2/TaN NMOS devices

L. Trojman, L.-Å. Ragnarsson, L. Pantisano, G.S. Lujan, M. Houssa, T. Schram, F. Cubaynes, M. Schaekers, A. Van Ammel, G. Groeseneken, S. De Gendt, M. Heyns

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 231 KB

english, 2005

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