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Impact of post-deposition-annealing on the electrical characteristics of HfOxNy gate dielectric on Ge substrate
Chao-Ching Cheng, Chao-Hsin Chien, Ching-Wei Chen, Shih-Lu Hsu, Ming-Yi Yang, Chien-Chao Huang, Fu-Liang Yang, Chun-Yen ChangVolume:
80
Year:
2005
Language:
english
Pages:
4
DOI:
10.1016/j.mee.2005.04.033
File:
PDF, 220 KB
english, 2005