Point defects at interfacial layers in stacks of (100)Ge...

Point defects at interfacial layers in stacks of (100)Ge with nm-thin HfO2 and GeOx(Ny) insulators probed by electron spin resonance

A. Stesmans, V.V. Afanas’ev
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Volume:
80
Year:
2005
Language:
english
Pages:
4
DOI:
10.1016/j.mee.2005.04.039
File:
PDF, 168 KB
english, 2005
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