![](/img/cover-not-exists.png)
Point defects at interfacial layers in stacks of (100)Ge with nm-thin HfO2 and GeOx(Ny) insulators probed by electron spin resonance
A. Stesmans, V.V. Afanas’evVolume:
80
Year:
2005
Language:
english
Pages:
4
DOI:
10.1016/j.mee.2005.04.039
File:
PDF, 168 KB
english, 2005