Fully strained Si0.75Ge0.25 epitaxial films with HfSiO gate...

Microelectronic Engineering 2008 Vol. 85; Iss. 8

Fully strained Si0.75Ge0.25 epitaxial films with HfSiO gate dielectrics for high mobility channel metal-oxide semiconductor devices

Jungwoo Oh, Prashant Majhi, Raj Jammy, Raymond Joe, Takuya Sugawara, Yasushi Akasaka, Takanobu Kaitsuka, Tsunetoshi Arikado, Masayuki Tomoyasu
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Volume:
85
Year:
2008
Language:
english
Pages:
3
DOI:
10.1016/j.mee.2008.05.013
File:
PDF, 639 KB
english, 2008
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