Molecular beam epitaxy passivation studies of Ge and III–V...

Microelectronic Engineering 2009 Vol. 86; Iss. 7-9

Molecular beam epitaxy passivation studies of Ge and III–V semiconductors for advanced CMOS

C. Merckling, J. Penaud, D. Kohen, F. Bellenger, A. Alian, G. Brammertz, M. El-Kazzi, M. Houssa, J. Dekoster, M. Caymax, M. Meuris, M.M. Heyns
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Volume:
86
Year:
2009
Language:
english
Pages:
4
DOI:
10.1016/j.mee.2009.03.048
File:
PDF, 420 KB
english, 2009
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