Volume 86; Issue 7-9

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Microelectronic Engineering
Volume 86; Issue 7-9

Microelectronic Engineering

Volume 86; Issue 7-9

1

High κ for MIM and RRAM applications: Impact of the metallic electrode and oxygen vacancies

C. Vallée, P. Gonon, C. Jorel, F. El Kamel, M. Mougenot, V. Jousseaume

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 316 KB

english, 2009

2

Band offsets at interfaces of (1 0 0)InxGa1−xAs (0 ⩽ x ⩽ 0.53) with Al2O3 and HfO2

V.V. Afanas’ev, A. Stesmans, G. Brammertz, A. Delabie, S. Sionke, A. O’Mahony, I.M. Povey, M.E. Pemble, E. O’Connor, P.K. Hurley, S.B. Newcomb

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 357 KB

english, 2009

3

Spectroscopic differentiation between O-atom vacancy and divacancy defects, respectively, in TiO2 and HfO2 by X-ray absorption spectroscopy

G. Lucovsky, K.-B. Chung, J.-W. Kim, D. Norlund

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 540 KB

english, 2009

4

Electrical characterization of metal-ferroelectric (Mn-substituted BiFeO3)-insulator (HfO2)-semiconductor capacitors for nonvolatile memory applications

Pi-chun Juan, Chen-Hao Wang

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 558 KB

english, 2009

5

Compositional dependence of work function and Fermi level position of the HfNx/SiO2 system

J.A. Rothschild, M. Eizenberg

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 429 KB

english, 2009

6

Wide band (0.05–40 GHz) characterization and signal propagation in Cu–porous MSQ interconnects

T.K.S. Wong, R. Kumar, S.C. Rustagi

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 386 KB

english, 2009

7

Atomic layer deposition of Ge2Sb2Te5 thin films

Mikko Ritala, Viljami Pore, Timo Hatanpää, Mikko Heikkilä, Markku Leskelä, Kenichiro Mizohata, Alejandro Schrott, Simone Raoux, Stephen M. Rossnagel

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 623 KB

english, 2009

8

Electronic structure of oxygen vacancies in La2O3, Lu2O3 and LaLuO3

Ka Xiong, John Robertson

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 897 KB

english, 2009

9

Hf- and Zr-based alkaline earth perovskite dielectrics for memory applications

G. Łupina, O. Seifarth, G. Kozłowski, P. Dudek, J. Dąbrowski, G. Lippert, H.-J. Müssig

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 1.02 MB

english, 2009

10

Accurate electron mobility extraction in nMOSFETs by RF split CV

G. Hyvert, F. Calmon, T. Nguyen, A. Poncet, C. Plossu

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 505 KB

english, 2009

11

Program efficiency and high temperature retention of SiN/high-K based memories

E. Vianello, M. Bocquet, F. Driussi, L. Perniola, G. Molas, L. Selmi

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 547 KB

english, 2009

12

Effect of interface state trap density on the characteristics of n-type, enhancement-mode, implant-free In0.3Ga0.7As MOSFETs

J. Ayubi-Moak, B. Benbakhti, K. Kalna, G.W. Paterson, R. Hill, M. Passlack, I. Thayne, A. Asenov

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 390 KB

english, 2009

13

Effect of heat treatments on electric dipole at metal/high-k dielectric interfaces measured by in situ XPS

Andrei Zenkevich, Yuri Lebedinskii, Yuri Matveyev, Sabina Spiga, Luca Lamagna, Marco Fanciulli

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 354 KB

english, 2009

14

Sr excess accommodation in ALD grown SrTiO3 and its impact on the dielectric response

S. Clima, G. Pourtois, N. Menou, M. Popovici, A. Rothschild, B. Kaczer, S. Van Elshocht, X.P. Wang, J. Swerts, D. Pierreux, S. De Gendt, D.J. Wouters, J.A. Kittl

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 507 KB

english, 2009

15

Characterization of TiOxNy nanoparticles embedded in HfOxNy as charge trapping nodes for nonvolatile memory device applications

Chien-Wei Liu, Chin-Lung Cheng, Kuei-Shu Chang-Liao, Jin-Tsong Jeng, Bau-Tong Dai, Chen-Pang Tsai

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 358 KB

english, 2009

16

Data retention characteristics of MANOS-type flash memory device with different metal gates at various levels of charge injection

Man Chang, Tae-Wook Kim, Joonmyoung Lee, Minseok Jo, Seonghyun Kim, Seungjae Jung, Hyejung Choi, Takhee Lee, Hyunsang Hwang

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 411 KB

english, 2009

17

Electroluminescence, charge trapping and quenching in Eu implantes SiO2–Si structures

S. Tyagulskiy, I. Tyagulskyy, A. Nazarov, V. Lysenko, L. Rebohle, J. Lehmann, W. Skorupa

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 302 KB

english, 2009

18

Lanthanum implantation for threshold voltage control in metal/high-k devices

A. Fet, V. Häublein, A.J. Bauer, H. Ryssel, L. Frey

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 419 KB

english, 2009

19

Strain sensitivity of gate leakage in strained-SOI nMOSFETs: A benefit for the performance trade-off and a novel way to extract the strain-induced band offset

F. Rochette, X. Garros, G. Reimbold, F. Andrieu, M. Cassé, M. Mouis, G. Ghibaudo, F. Boulanger

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 510 KB

english, 2009

20

High-k dielectrics for future generation memory devices (Invited Paper)

J.A. Kittl, K. Opsomer, M. Popovici, N. Menou, B. Kaczer, X.P. Wang, C. Adelmann, M.A. Pawlak, K. Tomida, A. Rothschild, B. Govoreanu, R. Degraeve, M. Schaekers, M. Zahid, A. Delabie, J. Meersschaut,

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 1.20 MB

english, 2009

21

Molecular beam epitaxy passivation studies of Ge and III–V semiconductors for advanced CMOS

C. Merckling, J. Penaud, D. Kohen, F. Bellenger, A. Alian, G. Brammertz, M. El-Kazzi, M. Houssa, J. Dekoster, M. Caymax, M. Meuris, M.M. Heyns

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 420 KB

english, 2009

22

Opportunities and challenges for Ge CMOS – Control of interfacing field on Ge is a key (Invited Paper)

Akira Toriumi, Toshiyuki Tabata, Choong Hyun Lee, Tomonori Nishimura, Koji Kita, Kosuke Nagashio

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 941 KB

english, 2009

23

Interface states model for III–V oxide interfaces

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 457 KB

english, 2009

24

Electrical properties of atomic-layer-deposited La2O3 films using a novel La formamidinate precursor and ozone

B. Lee, T.J. Park, A. Hande, M.J. Kim, R.M. Wallace, J. Kim, X. Liu, J.H. Yi, H. Li, M. Rousseau, D. Shenai, J. Suydam

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 470 KB

english, 2009

25

Quasi-damascene metal gate/high-k CMOS using oxygenation through gate electrodes

Changhwan Choi, Takashi Ando, Eduard Cartier, Martin M. Frank, Ryosuke Iijima, Vijay Narayanan

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 697 KB

english, 2009

26

Experimental demonstration and analysis of high performance and low 1/f noise Tri-gate MOSFETs by optimizing device structure

Weitao Cheng, Akinobu Teramoto, Tadahiro Ohmi

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 634 KB

english, 2009

27

Scaling the MOSFET gate dielectric: From high-k to higher-k? (Invited Paper)

Martin M. Frank, SangBum Kim, Stephen L. Brown, John Bruley, Matthew Copel, Marco Hopstaken, Michael Chudzik, Vijay Narayanan

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 539 KB

english, 2009

28

Integration of Gd silicate/TiN gate stacks into SOI n-MOSFETs

M. Schmidt, A. Stefani, H.D.B. Gottlob, H. Kurz

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 448 KB

english, 2009

29

Amorphous ternary rare-earth gate oxides for future integration in MOSFETs

J.M.J. Lopes, E. Durğun Özben, M. Roeckerath, U. Littmark, R. Lupták, St. Lenk, M. Luysberg, A. Besmehn, U. Breuer, J. Schubert, S. Mantl

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 538 KB

english, 2009

30

Theoretical studies on the charge trap mechanism of MONOS type memories – Relationship between atomistic information and program/erase actions

Akira Otake, Keita Yamaguchi, Kenji Kobayashi, Kenji Shiraishi

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 395 KB

english, 2009

31

Charge retention improvement of charge-trapping type flash device by plasma immersion ion implantation

Li-Jung Liu, Kuei-Shu Chang-Liao, Tai-Yu Wu, Tien-Ko Wang, Wen-Fa Tsai, Chi-Fong Ai

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 462 KB

english, 2009

32

Effect of high-temperature annealing on lanthanum aluminate thin films grown by ALD on Si(1 0 0)

G. Congedo, S. Spiga, L. Lamagna, A. Lamperti, Yu. Lebedinskii, Yu. Matveyev, A. Zenkevich, P. Chernykh, M. Fanciulli

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 372 KB

english, 2009

33

Flat band voltage control on low Vt metal-gate/high-κ CMOSFETs with small EOT (Invited Paper)

Albert Chin, M.F. Chang, S.H. Lin, W.B. Chen, P.T. Lee, F.S. Yeh, C.C. Liao, M.-F. Li, N.C. Su, S.J. Wang

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 588 KB

english, 2009

34

Interface studies of ALD-grown metal oxide insulators on Ge and III–V semiconductors (Invited Paper)

Paul C. McIntyre, Yasuhiro Oshima, Eunji Kim, Krishna C. Saraswat

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 1006 KB

english, 2009

35

Investigation of oxidation-induced strain in a top-down Si nanowire platform

M. Najmzadeh, D. Bouvet, P. Dobrosz, S. Olsen, A.M. Ionescu

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 413 KB

english, 2009

36

A novel SONOS-type flash device with stacked charge trapping layer

Zong-Hao Ye, Kuei-Shu Chang-Liao, Te-Chiang Liu, Tien-Ko Wang, Pei-Jer Tzeng, Cha-Hsin Lin, Min-Jinn Tsai

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 420 KB

english, 2009

37

Phase change and electrical characteristics of Ge–Se–Te alloys

Eui-Bok Lee, Byeong-Kwon Ju, Yong-Tae Kim

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 594 KB

english, 2009

38

Comparative study between conventional macroscopic IV techniques and advanced AFM based methods for electrical characterization of dielectrics at the nanoscale

V. Yanev, T. Erlbacher, M. Rommel, A.J. Bauer, L. Frey

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 383 KB

english, 2009

39

Silicon nanowire NVM with high-k gate dielectric stack

Xiaoxiao Zhu, D. Gu, Qiliang Li, D.E. Ioannou, H. Baumgart, J.S. Suehle, C.A. Richter

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 358 KB

english, 2009

40

Comparison between the electrical properties of atomic layer deposited thin ZrO2 films processed from cyclopentadienyl precursors

Salvador Dueñas, Helena Castán, Héctor García, Alfonso Gómez, Luis Bailón, Kaupo Kukli, Jaakko Niinistö, Mikko Ritala, Markku Leskelä

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 393 KB

english, 2009

41

Experimental study for high effective mobility with directly deposited HfO2/La2O3 MOSFET

T. Kawanago, J. Song, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 474 KB

english, 2009

42

Molecular beam deposition of LaAlO3 on silicon for sub-22 nm CMOS technological nodes: Towards a perfect control of the oxide/silicon heterointerface

S. Pelloquin, L. Becerra, G. Saint-Girons, C. Plossu, N. Baboux, D. Albertini, G. Grenet, G. Hollinger

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 430 KB

english, 2009

43

Piezoresistive coefficients of 〈1 1 0〉 silicon-on-insulator MOSFETs with 0.135/0.45/10 micrometers channel length with external forces

W.T. Chang, J.A. Lin

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 1.22 MB

english, 2009

44

Stabilization of a very high-k tetragonal ZrO2 phase by direct doping with germanium

D. Tsoutsou, G. Apostolopoulos, S. Galata, P. Tsipas, A. Sotiropoulos, G. Mavrou, Y. Panayiotatos, A. Dimoulas

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 386 KB

english, 2009

45

Defects and instabilities in Hf-dielectric/SiON stacks (Invited Paper)

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 728 KB

english, 2009

46

Mechanism of positive charge generation in the bulk of HfAlO/SiO2 stack

Piyas Samanta, Chin-Lung Cheng, Yao-Jen Lee, Mansun Chan

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 559 KB

english, 2009

47

Application of non-linear optical second harmonic generation and X-ray absorption and spectroscopies to defect related properties of Hf silicate and Hf Si oxynitride gate dielectrics

K. Gundogdu, G. Lucovsky, K.-B. Chung, J.-W. Kim, D. Nordlund

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 901 KB

english, 2009

48

Electronic structure of bulk and defect α- and γ-Al2O3

T.V. Perevalov, A.V. Shaposhnikov, V.A. Gritsenko

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 458 KB

english, 2009

49

Degradation dynamics and breakdown of MgO gate oxides

E. Miranda, E. O’Connor, G. Hughes, P. Casey, K. Cherkaoui, S. Monaghan, R. Long, D. O’Connell, P.K. Hurley

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 419 KB

english, 2009

50

Oxygen vacancy levels and interfaces of Al2O3

D. Liu, J. Robertson

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 340 KB

english, 2009

51

Atomic mechanism of flat-band voltage shifts at La2O3, Al2O3 and Nb2O5 capping layers

L. Lin, J. Robertson

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 415 KB

english, 2009

52

The impact of Al interfacial layer on resistive switching of La0.7Sr0.3MnO3 for reliable ReRAM applications

Joonmyoung Lee, Hyejung Choi, Dong-jun Seong, Jaesik Yoon, Jubong Park, Seungjae Jung, Wootae Lee, Man Chang, Chunhum Cho, Hyunsang Hwang

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 460 KB

english, 2009

53

Stability and Schottky barrier of silicides: First-principles study

T. Nakayama, S. Sotome, S. Shinji

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 490 KB

english, 2009

54

Crystallization and silicon diffusion nanoscale effects on the electrical properties of Al2O3 based devices

M. Lanza, M. Porti, M. Nafria, X. Aymerich, G. Benstetter, E. Lodermeier, H. Ranzinger, G. Jaschke, S. Teichert, L. Wilde, P. Michalowski

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 646 KB

english, 2009

55

A study on fluorine incorporation in Ge p-MOS capacitors with HfTiON dielectric

C.X. Li, C.D. Wang, C.H. Leung, P.T. Lai, J.P. Xu

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 374 KB

english, 2009

56

Recovery study of negative bias temperature instability

Miaomiao Wang, Sufi Zafar, James H. Stathis

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 379 KB

english, 2009

57

Estimate of dielectric density using spectroscopic ellipsometry

W. Davey, O. Buiu, M. Werner, I.Z. Mitrovic, S. Hall, P. Chalker

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 375 KB

english, 2009

58

Surface passivation and implications on high mobility channel performance (Invited Paper)

C.L. Hinkle, M. Milojevic, E.M. Vogel, R.M. Wallace

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 889 KB

english, 2009

59

Channel hot-carrier degradation under AC stress in short channel nMOS devices with high-k gate stacks

E. Amat, R. Rodríguez, M. Nafría, X. Aymerich

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 350 KB

english, 2009

60

Reliable impurity trap memory with high charge trap efficiency using ultrathin SiO2 impurity host layer for nonvolatile memory application

Seungjae Jung, Man Chang, Seonghyun Kim, Joonmyung Lee, Chunhum Cho, Choongman Lee, Hyunsang Hwang

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 474 KB

english, 2009

61

Atomic-scale theory on current-assisted thermochemical degradation mode and its field acceleration via charge trapping of O vacancy in HfSiO4

Yasushi Nakasaki, Izumi Hirano, Koichi Kato, Yuichiro Mitani

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 563 KB

english, 2009

62

Cycling degradation in TANOS stack

G. Ghidini, C. Scozzari, N. Galbiati, A. Modelli, E. Camerlenghi, M. Alessandri, A. Del Vitto, G. Albini, A. Grossi, T. Ghilardi, P. Tessariol

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 455 KB

english, 2009

63

Growth, ambient stability and electrical characterisation of MgO thin films on silicon surfaces

P. Casey, E. O’Connor, R. Long, B. Brennan, S.A. Krasnikov, D. O’Connell, P.K. Hurley, G. Hughes

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 435 KB

english, 2009

64

Experimental evidence of suppression on oxygen vacancy formation in Hf based high-κ gate dielectrics with La incorporation

Chun-Chang Lu, Kuei-Shu Chang-Liao, Yu-Fen Cheng, Tien-Ko Wang

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 621 KB

english, 2009

65

Post metallization annealing study in La2O3/Ge MOS structure

J. Song, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 544 KB

english, 2009

66

Reliability issues and modeling of Flash and post-Flash memory (Invited Paper)

Daniele Ielmini

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 678 KB

english, 2009

67

Germanium surface and interfaces (Invited Paper)

A. Dimoulas, P. Tsipas

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 451 KB

english, 2009

68

Interfacial layer optimization of high-k/metal gate stacks for low temperature processing

Barry P. Linder, Vijay Narayanan, Eduard A. Cartier

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 330 KB

english, 2009

69

Point defects in Al2O3 and their impact on gate stacks

J.R. Weber, A. Janotti, C.G. Van de Walle

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 365 KB

english, 2009

70

The evolution of optical and electrical properties of low-k dielectrics under bias stress

J.M. Atkin, E. Cartier, T.M. Shaw, J.R. Lloyd, R.B. Laibowitz, T.F. Heinz

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 463 KB

english, 2009

71

Improvement in NBTI reliability of Si-passivated Ge/high-k/metal-gate pFETs

B. Kaczer, J. Franco, J. Mitard, Ph. J. Roussel, A. Veloso, G. Groeseneken

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 391 KB

english, 2009

72

Impact of PDA temperature on electron trap energy and spatial distributions in SiO2/Al2O3 stack as the IPD in Flash memory cells

X.F. Zheng, W.D. Zhang, B. Govoreanu, J.F. Zhang, J. Van Houdt

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 379 KB

english, 2009

73

“Higher-κ” dielectrics for advanced silicon microelectronic devices: A combinatorial research study

M.L. Green, P.K. Schenck, K.-S. Chang, J. Ruglovsky, M. Vaudin

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 326 KB

english, 2009

74

Improved GeOI substrates for pMOSFET off-state leakage control

K. Romanjek, E. Augendre, W. Van Den Daele, B. Grandchamp, L. Sanchez, C. Le Royer, J.-M. Hartmann, B. Ghyselen, E. Guiot, K. Bourdelle, S. Cristoloveanu, F. Boulanger, L. Clavelier

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 697 KB

english, 2009

75

Impact of interface variations on J–V and C–V polarity asymmetry of MIM capacitors with amorphous and crystalline Zr(1−x)AlxO2 films

W. Weinreich, R. Reiche, M. Lemberger, G. Jegert, J. Müller, L. Wilde, S. Teichert, J. Heitmann, E. Erben, L. Oberbeck, U. Schröder, A.J. Bauer, H. Ryssel

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 619 KB

english, 2009

76

Three-dimensional modeling of the tunneling potential in MOS memories embedded with metal nanoparticles

M. Beniakar, A. Kladas, J.P. Xanthakis, Ch. Sargentis, D. Tsamakis

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 423 KB

english, 2009

77

Ultra-low-energy ion-beam-synthesis of Ge nanocrystals in thin ALD Al2O3 layers for memory applications

P. Dimitrakis, A. Mouti, C. Bonafos, S. Schamm, G. Ben Assayag, V. Ioannou-Sougleridis, B. Schmidt, J. Becker, P. Normand

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 587 KB

english, 2009

78

Improved manufacturability of ZrO2 MIM capacitors by process stabilizing HfO2 addition

J. Müller, T.S. Böscke, U. Schröder, M. Reinicke, L. Oberbeck, D. Zhou, W. Weinreich, P. Kücher, M. Lemberger, L. Frey

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 587 KB

english, 2009

79

Low temperature formation of SiO2 thin films by nitric acid oxidation of Si (NAOS) and application to thin film transistor (TFT)

T. Matsumoto, Asuha, W.-B. Kim, M. Yamada, S. Imai, S. Terakawa, H. Kobayashi

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 213 KB

english, 2009

80

Significant reduction of Positive Bias Temperature Instability in high-k/metal-gate nFETs by incorporation of rare earth metals

B. Kaczer, A. Veloso, M. Aoulaiche, G. Groeseneken

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 584 KB

english, 2009

81

Reliability of charge trapping memories with high-k control dielectrics (Invited Paper)

G. Molas, M. Bocquet, E. Vianello, L. Perniola, H. Grampeix, J.P. Colonna, L. Masarotto, F. Martin, P. Brianceau, M. Gély, C. Bongiorno, S. Lombardo, G. Pananakakis, G. Ghibaudo, B. De Salvo

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 979 KB

english, 2009

82

Scaling potential and MOSFET integration of thermally stable Gd silicate dielectrics

H.D.B. Gottlob, M. Schmidt, A. Stefani, M.C. Lemme, H. Kurz, I.Z. Mitrovic, W.M. Davey, S. Hall, M. Werner, P.R. Chalker, K. Cherkaoui, P.K. Hurley, J. Piscator, O. Engström, S.B. Newcomb

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 372 KB

english, 2009

83

Unified mechanisms for structural relaxation and crystallization in phase-change memory devices

D. Ielmini, M. Boniardi, A.L. Lacaita, A. Redaelli, A. Pirovano

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 394 KB

english, 2009

84

Atomistic model structure of the Ge(1 0 0)–GeO2 interface

Peter Broqvist, Jan Felix Binder, Alfredo Pasquarello

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 326 KB

english, 2009

85

Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning (Invited Paper)

Matty Caymax, Guy Brammertz, Annelies Delabie, Sonja Sioncke, Dennis Lin, Marco Scarrozza, Geoffrey Pourtois, Wei-E Wang, Marc Meuris, Marc Heyns

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 655 KB

english, 2009

86

Deposition of HfO2 on InAs by atomic-layer deposition

D. Wheeler, L.-E. Wernersson, L. Fröberg, C. Thelander, A. Mikkelsen, K.-J. Weststrate, A. Sonnet, E.M. Vogel, A. Seabaugh

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 395 KB

english, 2009

87

The progress and challenges of threshold voltage control of high-k/metal-gated devices for advanced technologies (Invited Paper)

Hsing-Huang Tseng, Paul Kirsch, C.S. Park, Gennadi Bersuker, Prashant Majhi, Muhammad Hussain, Raj Jammy

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 763 KB

english, 2009

88

Electronic structure of memory traps in silicon nitride

V.A. Gritsenko, S.S. Nekrashevich, V.V. Vasilev, A.V. Shaposhnikov

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 679 KB

english, 2009

89

Lanthanum germanate as dielectric for scaled Germanium metal–oxide–semiconductor devices

C. Andersson, C. Rossel, M. Sousa, D.J. Webb, C. Marchiori, D. Caimi, H. Siegwart, Y. Panayiotatos, A. Dimoulas, J. Fompeyrine

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 428 KB

english, 2009

90

Inhomogeneous Ni/Ge Schottky barriers due to variation in Fermi-level pinning

X.V. Li, M.K. Husain, M. Kiziroglou, C.H. de Groot

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 365 KB

english, 2009

91

Understanding the potential and limitations of HfAlO as interpoly dielectric in floating-gate Flash memory

B. Govoreanu, R. Degraeve, M.B. Zahid, L. Nyns, M. Cho, B. Kaczer, M. Jurczak, J.A. Kittl, J. Van Houdt

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 803 KB

english, 2009

92

Performance and reliability of advanced High-K/Metal gate stacks (Invited Paper)

X. Garros, M. Casse, G. Reimbold, M. Rafik, F. Martin, F. Andrieu, V. Cosnier, F. Boulanger

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 932 KB

english, 2009

93

First principles study of substoichiometric germanium oxides

Jan Felix Binder, Peter Broqvist, Alfredo Pasquarello

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 325 KB

english, 2009

94

Analysis of copper ion filaments and retention of dual-layered devices for resistance random access memory applications

Jaesik Yoon, Joonmyoung Lee, Hyejung Choi, Ju-Bong Park, Dong-jun Seong, Wootae Lee, Chunhum Cho, Seonghyun Kim, Hyunsang Hwang

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 542 KB

english, 2009

95

Tuning the dipole at the High-κ/SiO2 interface in advanced metal gate stacks

M. Charbonnier, C. Leroux, V. Cosnier, P. Besson, F. Martin, G. Ghibaudo, G. Reimbold

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 590 KB

english, 2009

96

Growth temperature dependence of epitaxial Gd2O3 films on Si(1 1 1)

G. Niu, B. Vilquin, N. Baboux, C. Plossu, L. Becerra, G. Saint-Grions, G. Hollinger

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 880 KB

english, 2009

97

Ge integration on Si via rare earth oxide buffers: From MBE to CVD (Invited Paper)

T. Schroeder, A. Giussani, H.-J. Muessig, G. Weidner, I. Costina, Ch. Wenger, M. Lukosius, P. Storck, P. Zaumseil

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 2.15 MB

english, 2009

98

Paramagnetic Ge dangling bond type defects at (1 0 0)Si1−xGex/SiO2 interfaces (Invited Paper)

A. Stesmans, P. Somers, V.V. Afanas’ev

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 282 KB

english, 2009

99

A first-principles study of the structural and electronic properties of III–V/thermal oxide interfaces

M. Scarrozza, G. Pourtois, M. Houssa, M. Caymax, A. Stesmans, M. Meuris, M.M. Heyns

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 896 KB

english, 2009

100

Electrical study of sulfur passivated In0.53Ga0.47As MOS capacitor and transistor with ALD Al2O3 as gate insulator

Han-Chung Lin, Wei-E. Wang, Guy Brammertz, Marc Meuris, Marc Heyns

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 640 KB

english, 2009

101

Characterization of interfacial reaction and chemical bonding features of LaOx/HfO2 stack structure formed on thermally-grown SiO2/Si(1 0 0)

Akio Ohta, Daisuke Kanme, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 858 KB

english, 2009

102

Theoretical models for work function control (Invited Paper)

Kenji Shiraishi

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 473 KB

english, 2009

103

Modeling complexity of a complex gate oxide

Alexander A. Demkov, O. Sharia, X. Luo, G. Bersuker, J. Robertson

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 777 KB

english, 2009

104

Challenges of integration of high-κ dielectric with III–V materials (Invited Paper)

W. Tsai, N. Goel, S. Koveshnikov, P. Majhi, W. Wang

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 561 KB

english, 2009

105

Atomistic origin of high-quality “novel SiON gate dielectrics”

Keita Yamaguchi, Akira Otake, Kenji Kobayashi, Kenji Shiraishi

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 673 KB

english, 2009

106

Stability of Si impurity in high-κ oxides

Naoto Umezawa, Kenji Shiraishi, Toyohiro Chikyow

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 264 KB

english, 2009

107

Understanding negative bias temperature instability in the context of hole trapping (Invited Paper)

T. Grasser, B. Kaczer, W. Goes, Th. Aichinger, Ph. Hehenberger, M. Nelhiebel

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 516 KB

english, 2009

108

Comprehensive investigation of trap-assisted conduction in ultra-thin SrTiO3 layers

D. Manger, B. Kaczer, N. Menou, S. Clima, D.J. Wouters, V.V. Afanas’ev, J.A. Kittl

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 430 KB

english, 2009

109

Net negative charge in low-temperature SiO2 gate dielectric layers

A. Boogaard, A.Y. Kovalgin, R.A.M. Wolters

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 284 KB

english, 2009

110

Electronic properties of defects in polycrystalline dielectric materials

K.P. McKenna, A.L. Shluger

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 833 KB

english, 2009

111

Preface

John Robertson, Steve Hall

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 103 KB

english, 2009

112

Interface and border trap relaxation in Si–SiO2 structures with Ge nanocrystals examined by transient capacitance spectroscopy

R. Beyer, J. von Borany, H. Burghardt

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 322 KB

english, 2009

113

Roadmap for 22 nm and beyond (Invited Paper)

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 1.98 MB

english, 2009

114

A nanoanalytical investigation of the Ga2O3/GaGdO dielectric gate stack for InGaAs based MOSFET devices

P. Longo, G.W. Paterson, M.C. Holland, I.G. Thayne, A.J. Craven

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 463 KB

english, 2009

115

Resistive non-volatile memory devices (Invited Paper)

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 747 KB

english, 2009

116

Inside Front Cover - Editorial Board

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 28 KB

english, 2009

117

Editorial Board

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 24 KB

english, 2009

118

Table of Contents

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 129 KB

english, 2009

119

Author Index

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 166 KB

english, 2009

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