32 nm node BEOL integration with an extreme low-k...

Microelectronic Engineering 2010 Vol. 87; Iss. 3

32 nm node BEOL integration with an extreme low-k porous SiOCH dielectric k = 2.3

K. Hamioud, V. Arnal, A. Farcy, V. Jousseaume, A. Zenasni, B. Icard, J. Pradelles, S. Manakli, Ph. Brun, G. Imbert, C. Jayet, M. Assous, S. Maitrejean, D. Galpin, C. Monget, J. Guillan, S. Chhun, E. R
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Volume:
87
Year:
2010
Language:
english
Pages:
5
DOI:
10.1016/j.mee.2009.07.008
File:
PDF, 565 KB
english, 2010
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