Volume 87; Issue 3

Microelectronic Engineering

Volume 87; Issue 3

1

Measurement of As diffusivity in Ni2Si thin films

I. Blum, A. Portavoce, D. Mangelinck, R. Daineche, K. Hoummada, J.L. Lábár, V. Carron, J. Bernardini

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 598 KB

english, 2010

2

Carbon nanotubes for nanoscale low temperature flip chip connections

Sascha Hermann, Barbara Pahl, Ramona Ecke, Stefan E. Schulz, Thomas Gessner

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 514 KB

english, 2010

3

Mapping of elastic modulus at sub-micrometer scale with acoustic contact resonance AFM

F. Mège, F. Volpi, M. Verdier

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 889 KB

english, 2010

4

X-ray microbeam strain investigation on Cu–MEMS structures

Olivier Perroud, Renaud Vayrette, Christian Rivero, Olivier Thomas, Jean-Sébastien Micha, Olivier Ulrich

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 449 KB

english, 2010

5

Nickel silicide encroachment formation and characterization

B. Imbert, R. Pantel, S. Zoll, M. Gregoire, R. Beneyton, S. del Medico, O. Thomas

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 491 KB

english, 2010

6

Plastic deformation in bi-metal multilayer nanowires

Fei Ma, Zhong-Xiao Song, Yan-Huai Li, Ke-Wei Xu

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 347 KB

english, 2010

7

Characterization of the annealing impact on La2O3/HfO2 and HfO2/La2O3 stacks for MOS applications

D. Rébiscoul, S. Favier, J-P. Barnes, J.W. Maes, F. Martin

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 1.47 MB

english, 2010

8

Role of titanium in Ti/Ni ohmic contact on n-type 6H-SiC

Petr Macháč, Bohumil Barda, Marie Kudrnová

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 466 KB

english, 2010

9

The influence of ultrasonic agitation on copper electroplating of blind-vias for SOI three-dimensional integration

Qianwen Chen, Zheyao Wang, Jian Cai, Litian Liu

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 456 KB

english, 2010

10

Characterization and impact of reduced copper plating overburden on 45 nm interconnect performances

O. Dubreuil, V. Caubet-Hilloutou, J. Guillan, K. Haxaire, M. Mellier, P. Caubet, P. Vannier, E. Petitprez, D. Bellet, Ph. Normandon

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 1.33 MB

english, 2010

11

Stabilization of sheet resistance for metal lines by formation of etch stop layer (ESL) trench structure

Dong-You Choi, Seung-Jo Han, Nam-Hoon Kim, Sang-Yong Kim

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 1.02 MB

english, 2010

12

32 nm node BEOL integration with an extreme low-k porous SiOCH dielectric k = 2.3

K. Hamioud, V. Arnal, A. Farcy, V. Jousseaume, A. Zenasni, B. Icard, J. Pradelles, S. Manakli, Ph. Brun, G. Imbert, C. Jayet, M. Assous, S. Maitrejean, D. Galpin, C. Monget, J. Guillan, S. Chhun, E. R

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 565 KB

english, 2010

13

Electrical resistivity calculations for copper nanointerconnect

Zhaoxiang Zong, Saeideh Mohammadzadeh, Yongfeng Cao, Zhijun Qiu, Ran Liu, Reinhard Streiter, Thomas Gessner

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 379 KB

english, 2010

14

Effect of multiple reflows on interfacial reaction and shear strength of Sn–Ag electroplated solder bumps for flip chip package

Sang-Su Ha, Jin-Kyu Jang, Sang-Ok Ha, Jeong-Won Yoon, Hoo-Jeong Lee, Jin-Ho Joo, Young-Ho Kim, Seung-Boo Jung

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 891 KB

english, 2010

15

Evaluation of a novel unfluorinated copper precursor for chemical vapor deposition

Haizheng Song, John A.T. Norman, Yukihiro Shimogaki

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 494 KB

english, 2010

16

Impact of the CMP process on the electrical properties of ultra low k porous SiOCH

C. Dubois, A. Sylvestre, H. Chaabouni, A. Farcy

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 332 KB

english, 2010

17

Physics of direct bonding: Applications to 3D heterogeneous or monolithic integration

Pierric Gueguen, Caroline Ventosa, Léa Di Cioccio, Hubert Moriceau, François Grossi, Maurice Rivoire, Patrick Leduc, Laurent Clavelier

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 901 KB

english, 2010

18

Analysis of the impact of different additives during etch processes of dense and porous low-k with OES and QMS

S. Zimmermann, N. Ahner, F. Blaschta, M. Schaller, H. Rülke, S.E. Schulz, T. Gessner

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 900 KB

english, 2010

19

Strength evaluation of silicon die for 3D chip stacking packages using ABF as dielectric and barrier layer in through-silicon via

C.J. Wu, M.C. Hsieh, K.N. Chiang

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 1.61 MB

english, 2010

20

Residual stress estimation in damascene copper interconnects using embedded sensors

R. Vayrette, C. Rivero, B. Gros, S. Blayac, K. Inal

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 354 KB

english, 2010

21

Mechanical properties of a plasma-modified porous low-k material

L. Broussous, G. Berthout, D. Rébiscoul, V. Rouessac, A. Ayral

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 350 KB

english, 2010

22

Grain morphology of Cu damascene lines

Stefan Brandstetter, Vincent Carreau, Sylvain Maîtrejean, Marc Verdier, Marc Legros

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 322 KB

english, 2010

23

Aerosol-jet-printed, high-speed, flexible thin-film transistor made using single-walled carbon nanotube solution

Carissa S. Jones, Xuejun Lu, Mike Renn, Mike Stroder, Wu-Sheng Shih

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 411 KB

english, 2010

24

Through silicon via: From the CMOS imager sensor wafer level package to the 3D integration

Xavier Gagnard, Thierry Mourier

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 1.27 MB

english, 2010

25

In situ X-ray diffraction study of thin film Ir/Si solid state reactions

W. Knaepen, J. Demeulemeester, D. Deduytsche, J.L. Jordan-Sweet, A. Vantomme, R.L. Van Meirhaeghe, C. Detavernier, C. Lavoie

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 694 KB

english, 2010

26

Thermal and Electrical Properties of PVD Ru(P) Film as Cu Diffusion Barrier

Dung-Ching Perng, Kuo-Chung Hsu, Shuo-Wen Tsai, Jia-Bin Yeh

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 789 KB

english, 2010

27

Bottom-up filling optimization for efficient TSV metallization

Elise Delbos, Laurent Omnès, Arnaud Etcheberry

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 238 KB

english, 2010

28

Titanium–aluminum oxynitride (TAON) as high-k gate dielectric for sub-32 nm CMOS technology

J. Miyoshi, J.A. Diniz, A.D. Barros, I. Doi, A.A.G. Von Zuben

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 306 KB

english, 2010

29

Effect of fluorine contamination on barrier metal oxidation

S. Ozaki, Y. Nakata, Y. Kobayashi, T. Nakamura, Y. Iba, S. Fukuyama, H. Watatani, Y. Ohkura

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 461 KB

english, 2010

30

Characterization of direct patterned Ag circuits for RF application

Jong-Woong Kim, Young-Chul Lee, Jong-Min Kim, Wansoo Nah, Hyo-Soo Lee, Hyuk-Chon Kwon, Seung-Boo Jung

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 489 KB

english, 2010

31

Analysis of electromigration induced early failures in Cu interconnects for 45 nm node

L. Arnaud, F. Cacho, L. Doyen, F. Terrier, D. Galpin, C. Monget

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 875 KB

english, 2010

32

Atomic layer deposition of tantalum oxide thin films for their use as diffusion barriers in microelectronic devices

A. Lintanf-Salaün, A. Mantoux, E. Djurado, E. Blanquet

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 573 KB

english, 2010

33

Wideband frequency and in situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors

T. Bertaud, C. Bermond, T. Lacrevaz, C. Vallée, Y. Morand, B. Fléchet, A. Farcy, M. Gros-Jean, S. Blonkowski

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 813 KB

english, 2010

34

Boron redistribution during reactive diffusion in Ni–Si contacts

O. Cojocaru-Mirédin, C. Perrin-Pellegrino, D. Mangelinck, D. Blavette

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 870 KB

english, 2010

35

Electrical demonstration of thermally stable Ni silicides on Si1−xCx epitaxial layers

V. Machkaoutsan, P. Verheyen, M. Bauer, Y. Zhang, S. Koelling, A. Franquet, K. Vanormelingen, R. Loo, C.S. Kim, A. Lauwers, N. Horiguchi, C. Kerner, T. Hoffmann, E. Granneman, W. Vandervorst, P. Absil

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 644 KB

english, 2010

36

Thin titanium oxide films deposited by e-beam evaporation with additional rapid thermal oxidation and annealing for ISFET applications

A.D. Barros, K.F. Albertin, J. Miyoshi, I. Doi, J.A. Diniz

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 412 KB

english, 2010

37

Behaviour of CPW and TFMS lines at high temperature for RF applications in sub-45 nm nodes

C. Roda Neve, A. Farcy, M. Gallitre, B. Blampey, P. Meuris, L. Arnaud, J.-P. Raskin

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 626 KB

english, 2010

38

Rare earth-based high-k materials for non-volatile memory applications

M. Alessandri, A. Del Vitto, R. Piagge, A. Sebastiani, C. Scozzari, C. Wiemer, L. Lamagna, M. Perego, G. Ghidini, M. Fanciulli

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 490 KB

english, 2010

39

In situ X-ray diffraction study of self-forming barriers from a Cu–Mn alloy in 100 nm Cu/low-k damascene interconnects using synchrotron radiation

Christopher J. Wilson, Henny Volders, Kristof Croes, Marianna Pantouvaki, Gerald P. Beyer, Alton B. Horsfall, Anthony G. O’Neill, Zsolt Tőkei

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 417 KB

english, 2010

40

Effect of top power on a low-k film during oxygen strip in a TCP etch chamber

E. Kunnen, T.V. Rakhimova, D. Shamiryan, H. Struyf, W. Boullart, M.R. Baklanov

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 419 KB

english, 2010

41

Reliability of copper low-k interconnects

Zsolt Tőkei, Kristof Croes, Gerald P. Beyer

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 615 KB

english, 2010

42

Investigation of physical and chemical property changes of ultra low-κ SiOCH in aspect of cleaning and chemical repair processes

Thomas Oszinda, Matthias Schaller, Daniel Fischer, Christine Walsh, Stefan E. Schulz

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 1.32 MB

english, 2010

43

Bottom-up copper electroplating using transfer wafers for fabrication of high aspect-ratio through-silicon-vias

Chongshen Song, Zheyao Wang, Litian Liu

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 450 KB

english, 2010

44

Deposition and characterization of electroless Ni–Co–P alloy for diffusion barrier applications

Anuj Kumar, Mukesh Kumar, Dinesh Kumar

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 568 KB

english, 2010

45

Variation in process conditions of porogen-based low-k films: A method to improve performance without changing existing process steps in a sub-100 nm Cu damascene integration route

D. De Roest, Y. Travaly, J. Beynet, H. Sprey, J. Labat, C. Huffman, P. Verdonck, S. Kaneko, K. Matsushita, N. Kobayashi, G. Beyer

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 533 KB

english, 2010

46

Investigation of the delamination mechanism of the thin film dielectric structure in flip chip packages

C.C. Chiu, C.J. Huang, S.Y. Yang, C.C. Lee, K.N. Chiang

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 724 KB

english, 2010

47

Studies on aluminium corrosion during and after HF vapour treatment

Heini Ritala, Jyrki Kiihamäki, Mikko Heikkilä

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 592 KB

english, 2010

48

Thinned wafer multi-stack 3DI technology

Takayuki Ohba, Nobuhide Maeda, Hideki Kitada, Koji Fujimoto, Kousuke Suzuki, Tomoji Nakamura, Akihito Kawai, Kazuhisa Arai

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 739 KB

english, 2010

49

In situ study of the formation of silicide phases in amorphous Co–Si mixed layers

C. Van Bockstael, K. De Keyser, J. Demeulemeester, A. Vantomme, R.L. Van Meirhaeghe, C. Detavernier, J.L. Jordan-Sweet, C. Lavoie

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 425 KB

english, 2010

50

An innovative NEMS pressure sensor approach based on heterostructure nanowire

X. Xu, B. Bercu, F. Lime, L. Montès

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 763 KB

english, 2010

51

Microstructure in copper interconnects – Influence of plating additive concentration

Jürgen Neuner, Inka Zienert, Anita Peeva, Axel Preuße, Peter Kücher, Johann W. Bartha

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 436 KB

english, 2010

52

Analysis of nickel cylindrical bump insertion into aluminium thin film for flip chip applications

M.D. Diop, V. Mandrillon, H. Boutry, K. Inal, R. Fortunier

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 1.29 MB

english, 2010

53

Nickel silicide formation by electroless technique for ULSI technology

Anuj Kumar, Mukesh Kumar, Amanpal Singh, Satinder Kumar, Dinesh Kumar

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 458 KB

english, 2010

54

Microwave characterization of porous SiOCH permittivity after integration dedicated to the 32 nm node

B. Blampey, M. Gallitre, A. Farcy, T. Lacrevaz, S. De Rivaz, C. Bermond, B. Fléchet, V. Jousseaume, A. Zenasni, P. Ancey

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 731 KB

english, 2010

55

Mechanism of porous low-k film damage induced by plasma etching radicals

Y. Iba, S. Ozaki, M. Sasaki, Y. Kobayashi, T. Kirimura, Y. Nakata

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 1.11 MB

english, 2010

56

The self-formation graded diffusion barrier of Zr/ZrN

Z.X. Song, J.A. Wang, Y.H. Li, F. Ma, K.W. Xu, S.W. Guo

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 371 KB

english, 2010

57

Post Si(C)N hillock nucleation and growth in IC copper lines controlled by diffusional creep

A. Timma, P. Caubet, B. Chenevier, O. Thomas, B. Kaouache, L. Dumas, P. Normandon, J.C. Giraudin

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 927 KB

english, 2010

58

The deposition of nanocrystalline TiO2 thin film on silicon using Sol–Gel technique and its characterization

Mukesh Kumar, Mukesh Kumar, Dinesh Kumar

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 467 KB

english, 2010

59

RF characterization and modelling of high density Through Silicon Vias for 3D chip stacking

L. Cadix, C. Bermond, C. Fuchs, A. Farcy, P. Leduc, L. DiCioccio, M. Assous, M. Rousseau, F. Lorut, L.L. Chapelon, B. Flechet, N. Sillon, P. Ancey

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 593 KB

english, 2010

60

Morphological and electrical characterization of SixCryCzBv thin films

S. Privitera, F. Wang, C. Niu, P. Dumont-Girard, H. Ding, K. Liu, R. Modica, C. Bongiorno

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 958 KB

english, 2010

61

Preface

Bernard Chenevier, Alexis Farcy, Sylvain Maîtrejean

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 200 KB

english, 2010

62

Performance predictions of interconnect networks for advanced technology nodes

M. Gallitre, A. Farcy, B. Blampey, C. Bermond, B. Fléchet, P. Ancey

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 667 KB

english, 2010

63

Amorphous-fcc transition in Ge2Sb2Te5

S. Lombardo, E. Rimini, M.G. Grimaldi, S. Privitera

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 1.22 MB

english, 2010

64

Inside Front Cover - Editorial Board

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 28 KB

english, 2010

65

Table of Contents

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 99 KB

english, 2010