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Simulation study of Short-Channel Effects and quantum confinement in double-gate FinFET devices with high-mobility materials
M. Moreau, D. Munteanu, J.L. AutranVolume:
88
Year:
2011
Language:
english
Pages:
4
DOI:
10.1016/j.mee.2010.08.026
File:
PDF, 444 KB
english, 2011